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Tongxing Yan

Researcher at Peking University

Publications -  23
Citations -  339

Tongxing Yan is an academic researcher from Peking University. The author has contributed to research in topics: Qubit & Phase transition. The author has an hindex of 7, co-authored 21 publications receiving 205 citations. Previous affiliations of Tongxing Yan include Sun Yat-sen University & Southern University of Science and Technology.

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Experimental Realization of Nonadiabatic Shortcut to Non-Abelian Geometric Gates

TL;DR: This work proposes and experimentally demonstrate that HQC via shortcut to adiabaticity can be constructed with only three energy levels, using a superconducting qubit in a scalable architecture and can be extended to construct two-qubit holonomic entangling gates, leading to a universal set of STAHQC gates.
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Simulation of higher-order topological phases and related topological phase Transitions in a Superconducting Qubit

TL;DR: In this article, a simulation of a two-dimensional second-order topological phase in a superconducting qubit was carried out, where the pseudo-spin texture was measured in momentum space of the bulk for the first time.
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Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask.

TL;DR: This developed ELOG on serpentine shaped mask needs no interruption and regrowth, which can be a promising candidate for the heteroepitaxy of semipolar/nonpolar GaN and GaAs with high quality.
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Optical properties of a novel parabolic quantum well structure in InGaN/GaN light emitters

TL;DR: In this article, two specially designed active layer structures by parabolic-shaped InGaN quantum well (QW) are proposed, and optical properties of these two parabolic QW structures are calculated and compared to those of conventional QW structure.