T
Toru Takayama
Publications - 79
Citations - 2725
Toru Takayama is an academic researcher. The author has contributed to research in topics: Thin-film transistor & Amorphous silicon. The author has an hindex of 28, co-authored 79 publications receiving 2725 citations.
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Patent
Semiconductor, semiconductor device, and method for fabricating the same
TL;DR: In this paper, a substantially amorphous silicon film is annealed at a temperature either lower than normal crystallization temperature of amorphized silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film.
Patent
Method of manufacturing multiple polysilicon TFTs with varying degrees of crystallinity
TL;DR: In this article, a second layer containing at least one catalytic element is formed as to be in intimate contact with the amorphous silicon film, or the catalytic elements is introduced into the polysilicon film.
Patent
Transistor and process for fabricating the same
TL;DR: In this paper, a process for fabricating a thin-film transistor, which comprises crystallizing an amorphous silicon film, forming thereon a gate insulating film and a gate electrode, implanting impurities in a self-aligned manner, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities.
Patent
Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor
TL;DR: In this article, an active matrix type liquid crystal display whose thin film transistors (TFTs) in the peripheral circuit section are composed of the crystalline silicon film whose crystal is grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are made of the amorphous silicon film can be obtained.
Patent
Semiconductor device employing crystallization catalyst
TL;DR: In this article, a small amount of a catalyst element for promoting crystallization is added to an amorphous silicon film, and an annealing process is conducted at a temperature which is lower than the distortion temperature of a substrate, thereby crystallizing the amorphized silicon film.