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Tuan-Khoa Nguyen

Researcher at Griffith University

Publications -  82
Citations -  1450

Tuan-Khoa Nguyen is an academic researcher from Griffith University. The author has contributed to research in topics: Piezoresistive effect & Silicon carbide. The author has an hindex of 18, co-authored 69 publications receiving 948 citations.

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Environment-friendly carbon nanotube based flexible electronics for noninvasive and wearable healthcare

TL;DR: In this paper, a wearable thermal flow sensor for healthcare using lightweight, high strength, flexible CNT yarns as hotwires, pencil graphite as electrodes, and lightweight, recyclable and biodegradable paper as flexible substrates, without using any toxic chemicals.
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Long-Lived, Transferred Crystalline Silicon Carbide Nanomembranes for Implantable Flexible Electronics.

TL;DR: The experimental results demonstrate that SiC nanomembranes with thicknesses of 230 nm do not experience the hydrolysis process, which creates important opportunities for use of flexible, wide band gap materials as essential components of long-lived neurological and cardiac electrophysiological device interfaces.
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Solvent-free fabrication of biodegradable hot-film flow sensor for noninvasive respiratory monitoring

TL;DR: In this article, a low-cost, environment-friendly and wearable thermal flow sensor, which can be manufactured in-house using pencil graphite as a sensing hot film and biodegradable printing paper as a substrate, without using any toxic solvents or cleanroom facilities.
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Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures

TL;DR: In this paper, a 4H-SiC piezoresistive pressure sensor using a laser scribing approach for fast prototyping a bulk SiC pressure sensor is presented, which is able to operate at a temperature range from cryogenic to elevated temperatures with an excellent linearity and repeatability with a pressure of up to 270
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The Piezoresistive Effect in Top–Down Fabricated p-Type 3C-SiC Nanowires

TL;DR: In this article, the piezoresistive effect of top-down fabricated 3C-SiC nanowires (NWs) was investigated and a focused ion beam was utilized to create p-type 3C -SiC NWs from a thin SiC thin film with a carrier concentration of $5 \times 10^{18}$ cm $^{-3}$ epitaxially grown on a Si substrate.