V
V. A. Krivchenko
Researcher at Moscow State University
Publications - 40
Citations - 639
V. A. Krivchenko is an academic researcher from Moscow State University. The author has contributed to research in topics: Carbon & Nanocrystalline material. The author has an hindex of 12, co-authored 37 publications receiving 499 citations. Previous affiliations of V. A. Krivchenko include Moscow Institute of Physics and Technology.
Papers
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Journal ArticleDOI
Insight into the Critical Role of Exchange Current Density on Electrodeposition Behavior of Lithium Metal
Yangyang Liu,Xieyu Xu,Matthew Sadd,Olesya O. Kapitanova,V. A. Krivchenko,Jun Ban,Jialin Wang,Xingxing Jiao,Zhongxiao Song,Jiangxuan Song,Shizhao Xiong,Aleksandar Matic +11 more
TL;DR: In this paper, a phase-field model is presented to show the effect of exchange current density on the electrodeposition behavior of Li, and it is shown that a uniform distribution of cathodic current density is obtained with lower exchange current densities.
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Carbon nanowalls: the next step for physical manifestation of the black body coating.
V. A. Krivchenko,Stanislav A. Evlashin,K. V. Mironovich,N. I. Verbitskiy,N. I. Verbitskiy,Alexei Nefedov,Christof Wöll,A. Ya. Kozmenkova,Nikolay V. Suetin,Nikolay V. Suetin,Sergey E. Svyakhovskiy,Denis V. Vyalikh,A. T. Rakhimov,Alexander V. Egorov,Lada V. Yashina +14 more
TL;DR: This work has estimated important trends in the optical property variation from sample to sample, and identified the presence of edge states and domain boundaries in carbon nanowalls as well as the film mass density variation as the key factors.
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Carbon nanowalls decorated with silicon for lithium-ion batteries
V. A. Krivchenko,Daniil M. Itkis,Stanislav A. Evlashin,Dmitry A. Semenenko,Eugene A. Goodilin,A. T. Rakhimov,A.S. Stepanov,Nikolay V. Suetin,A.A. Pilevsky,Pavel V. Voronin +9 more
TL;DR: The 3D silicon-decorated nanowall framework (SDNF) as mentioned in this paper could give the possibility to minimize the lithium diffusion length and make charge collection more effective yielding better cycling performance at high rates exceeding 2000mA/h per 1 g of silicon in the range of 0.05-2.00
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Nanocrystalline graphite: Promising material for high current field emission cathodes
V. A. Krivchenko,A.A. Pilevsky,A. T. Rakhimov,B.V. Seleznev,Nikolay V. Suetin,M.A. Timofeyev,A. V. Bespalov,O. L. Golikova +7 more
TL;DR: In this paper, the properties of nanocrystalline graphite (NCG) films, grown by plasma enhanced chemical vapor deposition method on conductive Si substrates without using of any catalyst, were investigated.
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Evolution of carbon film structure during its catalyst-free growth in the plasma of direct current glow discharge
V. A. Krivchenko,V. V. Dvorkin,N.N. Dzbanovsky,M.A. Timofeyev,A.S. Stepanov,A. T. Rakhimov,Nikolay V. Suetin,O. Yu. Vilkov,O. Yu. Vilkov,Lada V. Yashina +9 more
TL;DR: Based on the observation of the carbon nanotube/nanowall linear size variation in time and using the calculated binding energies and the diffusion thresholds obtained from the literature, this paper proposed that direct attachment of the CH3 radicals to the carbon nano-all edge is the predominant mechanism and the rate-limiting step of its growth.