V
V. Renard
Researcher at Centre national de la recherche scientifique
Publications - 30
Citations - 496
V. Renard is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Magnetoresistance & Electron. The author has an hindex of 11, co-authored 25 publications receiving 475 citations. Previous affiliations of V. Renard include Institut national des sciences appliquées de Toulouse & University of Burgundy.
Papers
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Journal ArticleDOI
Postpulse molecular alignment measured by a weak field polarization technique.
V. Renard,Maurice Renard,Stéphane Guérin,Y. T. Pashayan,Bruno Lavorel,Olivier Faucher,Hans-Rudolf Jauslin +6 more
TL;DR: This work reports a direct nonintrusive observation of alignment and planar delocalization of CO2 after an intense linearly polarized femtosecond laser pulse excitation through a polarization technique involving a perturbative probe.
Journal ArticleDOI
Nonintrusive monitoring and quantitative analysis of strong laser-field-induced impulsive alignment
V. Renard,Maurice Renard,Arnaud Rouzée,Stéphane Guérin,Hans-Rudolf Jauslin,Bruno Lavorel,Olivier Faucher +6 more
TL;DR: In this article, the periodic alignment of molecules produced through their interaction with a nonresonant, strong laser pulse is monitored using a polarization technique generally employed in optical Kerr effect experiments; the birefringence produced by alignment of the molecular sample is measured with a weak pulse, time-delayed with respect to the alignment pulse.
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Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices
J.M. Hartmann,Y. Bogumilowicz,P. Holliger,F. Laugier,R. Truche,G. Rolland,M. N. Séméria,V. Renard,V. Renard,E. B. Olshanetsky,O. Estibals,O. Estibals,Z.D Kvon,J. C. Portal,J. C. Portal,J. C. Portal,Laetitia Vincent,Fuccio Cristiano,Alain Claverie +18 more
TL;DR: In this paper, the authors studied the strain state, film and surface morphology of SiGe virtual substrates grown by reduced pressure chemical vapour deposition (RP-CVD) and found that the misfit dislocations generated to relax the lattice mismatch between Si and SiGe are mostly confined inside the graded layer.
Journal ArticleDOI
Measurement of laser-induced alignment of molecules by cross defocusing.
TL;DR: The field-free alignment of CO2 produced in response to the excitation of a molecule by a high-intensity femtosecond pump pulse is measured with a simple coronography-like technique based on the defocusing of a time-delayed probe pulse produced by the spatial distribution of aligned molecules.
Journal ArticleDOI
Conductivity of a two-dimensional electron gas in a Si/SiGe heterostructure near the metal-insulator transition: Role of the short- and long-range scattering potential
E. B. Olshanetsky,V. Renard,V. Renard,Z. D. Kvon,J. C. Portal,J. C. Portal,J. C. Portal,N. J. Woods,Jing Zhang,J. J. Harris +9 more
TL;DR: In this article, the authors reported the observation of a metal-insulator transition in a two-dimensional electron gas (2DEG) in a Si/SiGe heterostructure at zero magnetic field and observed the corresponding evolution of the magnetic field induced transition between the insulating phase and the quantum Hall (QH) liquid state in the QH regime.