J
J.M. Hartmann
Researcher at University of Grenoble
Publications - 334
Citations - 8293
J.M. Hartmann is an academic researcher from University of Grenoble. The author has contributed to research in topics: Silicon & Electron mobility. The author has an hindex of 45, co-authored 327 publications receiving 7464 citations.
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Proceedings ArticleDOI
A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration
Arnaud Hubert,Etienne Nowak,K. Tachi,V. Maffini-Alvaro,C. Vizioz,Christian Arvet,J. P. Colonna,J.M. Hartmann,Virginie Loup,L. Baud,S. Pauliac,Vincent Delaye,C. Carabasse,G. Molas,Gerard Ghibaudo,B. De Salvo,O. Faynot,Thomas Ernst +17 more
TL;DR: In this article, the Gate-All-Around (GAA) SONOS memory architecture with 4-level crystalline nanowire channels (down to 6nm-diameter) is extended to an independent double gate memory architecture, called φ-Flash.
Journal ArticleDOI
Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection
J.M. Hartmann,Alexandra Abbadie,A.M. Papon,P. Holliger,G. Rolland,T. Billon,Jean-Marc Fedeli,Mathieu Rouviere,Laurent Vivien,S. Laval +9 more
TL;DR: In this paper, the structural and optical properties of Ge-based photodetectors operating in the low loss windows (1.3-1.6 μm) of silica fibers are investigated.
Proceedings ArticleDOI
Advances, challenges and opportunities in 3D CMOS sequential integration
Perrine Batude,Maud Vinet,Bernard Previtali,Claude Tabone,Cuiqin Xu,J. Mazurier,Olivier Weber,Francois Andrieu,L. Tosti,L. Brevard,Benoit Sklenard,Perceval Coudrain,Shashikanth Bobba,H. Ben Jamaa,P.-E. Gaillardon,A. Pouydebasque,Olivier P. Thomas,C. Le Royer,J.M. Hartmann,Loic Sanchez,L. Baud,V. Carron,Laurent Clavelier,G. De Micheli,Simon Deleonibus,O. Faynot,Thierry Poiroux +26 more
TL;DR: This paper addresses the major challenges of 3D sequential integration: in particular, the control of molecular bonding allows us to obtain pristine quality top active layer and can match the performance of top FET, processed at low temperature (600°C), with the bottom FET devices.
Journal ArticleDOI
Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K
V. Reboud,Alban Gassenq,Nicolas Pauc,J. Aubin,L. Milord,Q. M. Thai,Mathieu Bertrand,Kevin Guilloy,D. Rouchon,J. Rothman,T. Zabel,F. Armand Pilon,H. Sigg,A. Chelnokov,J.M. Hartmann,V. Calvo +15 more
TL;DR: In this article, the authors reported a longer emitted wavelength and a significant improvement in lasing temperature using higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD.
Journal ArticleDOI
Improved precision in strain measurement using nanobeam electron diffraction
TL;DR: In this article, a Si0.69Ge0.31 layer, grown onto a Si substrate has been used to evaluate the precision and accuracy of the nanobeam electron diffraction technique.