Structural and electrical properties of fluorine doped tin oxide films prepared by spray-pyrolysis technique

Electrical, structural and surface properties of fluorine doped tin oxide films

Synthesis and optical analysis of nanostructured F-doped ZnO thin films by spray pyrolysis: Transparent electrode for photocatalytic applications

Indium oxide (In2O3) thin films were prepared by spray pyrolysis technique on glass substrates. Prepared thin films were irradiated by gamma radiations with various doses 1, 5, 10, and 100 kGy using an industrial gamma 60Co source. Structural, optical photoluminescence, and electrical properties of irradiated thin layers were investigated, respectively, by X-Ray diffraction, Raman spectroscopy, spectrophotometer, fluorescence spectrometer, and Hall effect. Analysis of structural properties of irradiated thin layers has shown that In2O3 thin films exhibit the same cubic structure with the appearance of new plane orientations (400) and (622) besides the initial one (222) with a decrease in grain size. Transmission values of irradiated thin layers show an increase from 77 to 86 % with the presence of more interference fringes. It was found that band gap energy E
 g decreases from 3.45 eV to a minimum value of 3.08 eV for a γ-dose of 10 kGy. Envelope method was used to determine the refractive index which decreases after exposing to γ-radiations from 3.38 to a minimum value of 1,98. Photoluminescence spectrum depicts a global diminution in intensity peak after irradiation. Besides, measured electrical resistivity shows a strong decrease from 65.02 × 10−2 Ω cm to a minimum value of 1.02 × 10−2 Ω cm for 5 kGy. These results suggest that gamma radiation can improve the physical properties of indium oxide thin films which can be used as transparent conductive electrode or optical window in photovoltaic devices.

Enhancement by high gamma radiations of optical and electrical properties of indium oxide thin films for solar devices

Effects of post-heat treatment on the characteristics of chalcopyrite CuInSe2 film deposited by successive ionic layer absorption and reaction method

Effect of annealing and γ-irradiation on the properties of CuInSe2 thin films

Highly transparent and conducting Fluorine doped zinc oxide thin films were deposited using spray pyrolysis method on glass substrates held at 450 0 C. The X-ray diffraction study revealed that as the dopant concentration increases in ZnO films, the intensity of the preferential orientation of (002) reflection decreased and (101) was found to increase up to 5 at. % F. The crystallite size was varied from 40 to 50 nm with dopant concentration. The optical band gap of the un-doped films was 3.30 eV and it increased to 3.34 eV for 3 at. % F. The refractive index of the films was increased from 2.05 to 2.18 with the increase of dopant concentration from 0 to 5 at. %. The scanning electron microscopy results depicted that the microstructure of ZnO: F films highly influenced by the fluorine doping. After annealing the films in hydrogen atmosphere, the resistivity of the films decreased as increase the dopant concentration and it is 4×10 -3 Ω cm for 3at. % F beyond which it increased. The mobility of the charge carriers was 14 cm 2 / V sec and the carrier concentration was 7.8×10 19 cm 3 obtained for the films doped with 3 at. % of fluorine concentration in the starting solution.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427413001358

The Structural, Optical and Electrical Properties of Spray Deposited Fluorine Doped ZnO Thin Films

We study the structural and optical properties of CuInSe thin films with the effect of annealing and g-irradiation. 2 CuInSe thin films have been successfully deposited by spray pyrolysis technique. The as-deposited films exhibited single 2 . phase, polycrystalline and chalcopyrite structure with 112 the preferred orientation, which were confirmed by X-ray . . diffraction XRD analysis. However, selected area diffraction SAD analysis revealed that the films showed single crystal nature in some of the regions. An increase in the lattice constants was observed for annealed and irradiated thin films. The theoretical XRD pattern was simulated with the experimental pattern of as-deposited CuInSe thin films. The optical band 2 gaps of the films were found to increase from 0.9 to 1.0 and 1.06 eV on annealing the films in vacuum at 653 K for 1 h and g-irradiation, respectively. In the case of irradiated samples, the second transition at 1.27 eV was observed, which was 51 . assigned to optical transition from split off valence band to the conduction band minimum from G to G. The

Vanjari Sundara Raja

Papers

Effect of annealing and γ-irradiation on the properties of CuInSe2 thin films

The Structural, Optical and Electrical Properties of Spray Deposited Fluorine Doped ZnO Thin Films

Effect of annealing and g-irradiation on the properties of CuInSe 2 thin films