Journal ArticleDOI
Effect of annealing and γ-irradiation on the properties of CuInSe2 thin films
Kodigala Subba Ramaiah,Kodigala Subba Ramaiah,Kodigala Subba Ramaiah,Vanjari Sundara Raja,Anil K. Bhatnagar,F. S. Juang,Shoou-Jinn Chang,Yan-Kuin Su +7 more
TLDR
In this article, the structural and optical properties of CuInSe 2 thin films with the effect of annealing and γ-irradiation were studied, and the optical band gaps of the films were found to increase from 0.9 to 1.06 eV.About:
This article is published in Materials Letters.The article was published on 2000-09-01. It has received 19 citations till now. The article focuses on the topics: Band gap & Lattice constant.read more
Citations
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Structural and electrical properties of fluorine doped tin oxide films prepared by spray-pyrolysis technique
TL;DR: In this article, a theoretically constructed XRD pattern for SnO 2 was used to compare with experimental pattern, the difference between them is discussed and the surface morphology of the films was observed as an effect of the variation of F/Sn ratio.
Journal ArticleDOI
Electrical, structural and surface properties of fluorine doped tin oxide films
TL;DR: In this article, the electrical properties of polycrystalline SnO 2 :F (3 at%) films were investigated, and it was concluded that each fluorine incorporation rate has a different and important effect on the physical properties.
Journal ArticleDOI
Enhancement by high gamma radiations of optical and electrical properties of indium oxide thin films for solar devices
TL;DR: In this article, the structural, optical photoluminescence, and electrical properties of irradiated thin layers were investigated, respectively, by X-Ray diffraction, Raman spectroscopy, spectrophotometer, fluorescence spectrometer, and Hall effect.
Journal ArticleDOI
Effects of post-heat treatment on the characteristics of chalcopyrite CuInSe2 film deposited by successive ionic layer absorption and reaction method
TL;DR: The influence of annealing effects in CuInSe 2 ternary films prepared by successive ionic layer absorption and reaction method has been investigated in this article, where the films have firstly been deposited on glass substrates at room temperature and then heat-treated under Ar atmosphere at various annesaling temperatures.
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Effect of gamma-irradiation on optical, structural and electrical properties of In2O3: F thin films for photocatalysis application
TL;DR: In this article, the effect of gamma radiation on optical constants such as refractive index n (λ), extinction coefficient k(λ), lattice dielectric constant eL, high frequency dielectrics constant e∞, plasma frequency ωP have been determined and the Wemple model based on the envelope method were applied to calculate the single oscillator energy E0 and dispersion energy Ed.
References
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Journal ArticleDOI
Electronic structure of the ternary chalcopyrite semiconductors CuAls2, CuGaS2, CuInS2, CuAlse2, CuGaSe2, and CuInSe2
J. E. Jaffe,Alex Zunger +1 more
TL;DR: In this article, the electronic structure of six Cu-based ternary chalcopyrite semiconductors is calculated self-consistently for the first time within the density-functional formalism.
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Electrical Properties, Optical Properties, and Band Structure of CuGa S 2 and CuIn S 2
TL;DR: In this article, the results of low-temperature luminescence and reflectivity were determined to have a direct band gap at 2 \ifmmode^\circ\else\textdegree\fi{}K.
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p − d Hybridization of the Valence Bands of I-III- VI 2 Compounds
TL;DR: The uppermost valence bands of I-III-${\mathrm{VI}}_{2}$ compounds result from a hybridization of the noble-metal $d$ levels with $p$ levels on the other atoms as discussed by the authors.
Journal ArticleDOI
Evaluation of Mott's Parameters for Hopping Conduction in Amorphous Ge, Si, and Se-Si
D. K. Paul,Shashanka S. Mitra +1 more
TL;DR: In this article, the temperature dependence of electrical conductivity of rf-sputtered amorphous Ge, Si, and Ge-Si films as functions of annealing temperature and time have been investigated.
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Electronic Structure of AgIn Se 2 and CuIn Se 2
TL;DR: In this paper, the authors report electroreflectance and photoluminescence studies of the chalcopyrite compounds AgIn${\mathrm{Se}}_{2}$ and CuIn${Se}µ, showing that both compounds have direct energy gaps.