V
Viktor Sverdlov
Researcher at Vienna University of Technology
Publications - 268
Citations - 2194
Viktor Sverdlov is an academic researcher from Vienna University of Technology. The author has contributed to research in topics: Magnetoresistive random-access memory & Silicon. The author has an hindex of 21, co-authored 249 publications receiving 2008 citations. Previous affiliations of Viktor Sverdlov include University of Vienna & University of Geneva.
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Proceedings ArticleDOI
Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications
TL;DR: In this article, the kinetic equation for the Wigner function is employed as a model for quantum transport in mesoscopic devices, and a Monte Carlo technique for the solution of this kinetic equation has been developed, based on an interpretation of the wigner potential operator as a generation term for numerical particles.
Journal ArticleDOI
Silicon-on-insulator for spintronic applications: spin lifetime and electric spin manipulation
TL;DR: In this paper, it is demonstrated that shear strain dramatically reduces the spin relaxation, thus boosting the spin lifetime by an order of magnitude, which is achieved by lifting the degeneracy between the otherwise equivalent unprimedsubbands by uniaxial stress.
Proceedings ArticleDOI
Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer
TL;DR: In this article, the authors present the methodology on how to achieve symmetric switching without an external magnetic field by properly engineering the nanopillar geometry, based on the magnetization dynamics described by the Landau-Lifschitzitz-Gilbert equation.
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Finite Element Modeling of Spin-Orbit Torques
N. Jørstad,Simone Fiorentini,Wilton Jaciel Loch,Wolfgang Goes,Siegfried Selberherr,Viktor Sverdlov +5 more
TL;DR: In this article , a spin drift-diffusion model for coupled spin and charge transport, including the spin Hall effect and the inverse spin Hall Effect, was used to evaluate spin-orbit torques acting on the magnetization in heavy metal/ferromagnet bilayers.
Journal ArticleDOI
Spin and charge drift-diffusion in ultra-scaled MRAM cells
Simone Fiorentini,M. Bendra,Johannes Ender,R. L. de Orio,Wolfgang Goes,Siegfried Selberherr,Viktor Sverdlov +6 more
TL;DR: In this article , the authors extended the analysis approach successfully used in nanoscale metallic spin valves to MTJ by introducing proper boundary conditions for the spin currents at the tunnel barrier interfaces, and by employing a conductivity locally dependent on the angle between the magnetization vectors for the charge current.