V
Vitalii Sichkovskyi
Researcher at University of Kassel
Publications - 56
Citations - 406
Vitalii Sichkovskyi is an academic researcher from University of Kassel. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 11, co-authored 50 publications receiving 325 citations. Previous affiliations of Vitalii Sichkovskyi include National Academy of Sciences of Ukraine.
Papers
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Proceedings ArticleDOI
1.5μm quantum dot laser material with high temperature stability of threshold current density and external differential efficiency
TL;DR: In this article, self-organized InAs quantum dot (QD) laser based on InP substrate were grown by means of solid source molecular beam epitaxy (SSMBE) and six InAs QD layers with high dot density and highly uniform dot sizes were used as active medium.
Journal ArticleDOI
Ramsey fringes in a room-temperature quantum-dot semiconductor optical amplifier
Igor Khanonkin,Akhilesh Kumar Mishra,Ouri Karni,S. Banyoudeh,Florian Schnabel,Vitalii Sichkovskyi,Vissarion Mikhelashvili,Johann Peter Reithmaier,Gadi Eisenstein +8 more
TL;DR: In this article, an inhomogeneously broadened ensemble of quantum dots, which serve as the gain medium of a semiconductor waveguide operating at room temperature, is demonstrated, and a subfemtosecond-resolution pump-probe scheme reveals a clear oscillatory behavior of the amplitude and instantaneous frequency of the probe pulse.
Journal ArticleDOI
Nanomaterials based on CdS nanoparticles in polyethylene matrix
M. V. Radchenko,G. V. Lashkarev,Vitalii Sichkovskyi,A. A. Arshakuni,S. P. Gubin,V. O. Yuhymchuk,Viktor Domukhovski,Tomasz Story,Yu. P. Piryatinskii,G. Yu. Yurkov +9 more
TL;DR: In this paper, the synthesis of CdS nanoparticles stabilized in the bulk of a polyethylene matrix is described by means of transmission electron microscopy, and the composition of nanoparticles is defined by X-ray phase analysis.
Journal ArticleDOI
Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures
W. Rudno-Rudziński,Marcin Syperek,J. Andrzejewski,Ernest Rogowicz,Gadi Eisenstein,Sven Bauer,Vitalii Sichkovskyi,Johann Peter Reithmaier,Grzegorz Sęk +8 more
TL;DR: It is proved that with carefully designed energy level structure, a hybrid QW/QD system can be used as an active region in telecom lasers with improved efficiencies and improved emission intensity at room temperature.
Journal ArticleDOI
Comparison between InP-based quantum dot lasers with and without tunnel injection quantum well and the impact of rapid thermal annealing
TL;DR: An InP-based tunnel injection quantum dot (QD) laser and a reference quantum dot laser designed to emit at 1.55 µm were grown by molecular beam epitaxy.