V
Vitalii Sichkovskyi
Researcher at University of Kassel
Publications - 56
Citations - 406
Vitalii Sichkovskyi is an academic researcher from University of Kassel. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 11, co-authored 50 publications receiving 325 citations. Previous affiliations of Vitalii Sichkovskyi include National Academy of Sciences of Ukraine.
Papers
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Proceedings ArticleDOI
InP-based 1.5 µm quantum dot lasers: Static and dynamic properties
Johann Peter Reithmaier,V. Ivanov,Vitalii Sichkovskyi,C. Gilfert,Anna Rippien,Nina Felgen,Florian Schnabel,Kerstin Fuchs,Kamen Koshuharov,D. Gready,Gadi Eisenstein +10 more
TL;DR: In this article, a review on the latest development of 155 μm quantum dot lasers is given, exhibiting data rates up to 22 GBit/s and the impact of structural and operational parameters.
Journal ArticleDOI
Ferromagnetic semiconductor Ge1−x−ySnxMnyTe with phase transformation of ferroelectric type
G. V. Lashkarev,Vitalii Sichkovskyi,M. V. Radchenko,V.E. Slynko,E.I. Slynko,Tomasz Story,Witold Dobrowolski,W. Knoff,T.Sh. Osmanov +8 more
TL;DR: In this paper, an existence of FM ordering at T C ∼50 K probably due to indirect exchange interaction between Mn ions via degenerated hole gas was revealed, and a divergence of magnetic moment temperature dependences at T ⩽ T C in field-cooled and zero-field-colded regimes is obliged to magnetic clusters which are responsible for superparamagnetism at T > T C ≈ T f (freezing temperature).
Proceedings ArticleDOI
Narrow Linewidth InAs/InP Quantum Dot DFB Laser
Tali Septon,Sutapa Gosh,Annette Becker,Vitalii Sichkovskyi,Florian Schnabel,Anna Rippien,Johann Peter Reithmaier,Gadi Eisenstein +7 more
TL;DR: Narrow linewidth InAs/InP QD DFB lasers with linewaiths of less than 50kHz at 20°C which broadens to less than 80kHz at 80°C were demonstrated using delayed self-heterodyne as well as by optical frequency comb interferometry.
Proceedings ArticleDOI
On the Relationship Between Electrical and Electro-Optical Characteristics in 1.55 μm Quantum Dot Lasers
Vissarion Mikhelashvili,Ori Eyal,Sutapa Ghosh,Igor Khanonkin,S. Banyoudeh,Vitalii Sichkovskyi,Johann Peter Reithmaier,Gadi Eisenstein +7 more
TL;DR: In this paper, the I-V and C-V of InAs/InP quantum-dot lasers are analyzed and yield important parameters such as dot density and the number of carriers per dot.
Journal ArticleDOI
High optical gain in InP-based quantum-dot material monolithically grown on silicon emitting at telecom wavelengths
R. Balasubramanian,Vitalii Sichkovskyi,Cedric Corley-Wiciak,Florian Schnabel,L. Popilevsky,Galit Atiya,Igor Khanonkin,A. Willinger,Ori Eyal,Gadi Eisenstein,Johann Peter Reithmaier +10 more
TL;DR: In this article , the fabrication process and properties of an InP-based quantum dot (QD) laser structure grown on a 5° off-cut silicon substrate were described and analyzed using high resolution transmission electron microscopy, atomic force microscopy and photoluminescence.