W
W. Calleja
Researcher at National Institute of Astrophysics, Optics and Electronics
Publications - 35
Citations - 265
W. Calleja is an academic researcher from National Institute of Astrophysics, Optics and Electronics. The author has contributed to research in topics: Silicon & Thin film. The author has an hindex of 9, co-authored 35 publications receiving 229 citations. Previous affiliations of W. Calleja include CINVESTAV.
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The conduction properties of the silicon/off-stoichiometry-SiO2 diode
TL;DR: In this paper, the behavior of the silicon/silicon rich oxide diode was studied for both positive and negative bias stressed for N and P substrates, and it was found that the C min in the C - V curves is affected by the charge status of the SRO.
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Optical properties of non-stoichiometric SiO2 as a function of excess silicon content and thermal treatments
TL;DR: In this paper, the authors studied the absorption spectra and the behavior of the refraction index of a two-phase non-stoichiometric SiO 2 film with excess Si and post-deposition thermal treatment.
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Influence of the surface roughness of the bottom electrode on the resistive-switching characteristics of Al/Al2O3/Al and Al/Al2O3/W structures fabricated on glass at 300 °C
Joel Molina,Rene Valderrama,Carlos Zuniga,Pedro Rosales,W. Calleja,Alfonso Torres,J. Hidalga,Edmundo Gutierrez +7 more
TL;DR: It is found that the switching characteristics of Al 2 O 3 (from a high-resistance state HRS to a low-Resistance state LRS and vice versa), are highly dependent on the surface roughness of the BE, the thickness of Al2 O 3 and the current compliance which limits the electron density flowing through both top/bottom electrodes.
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Duality metal oxide semiconductor–PN junction in the Al/silicon rich oxide/Si structure as a radiation sensor
TL;DR: In this paper, the possibilities of using the induced PN junction as a photon detector in the Al/silicon rich oxide/Si devices were investigated, and it was shown that the PN-induced junction is sensitive to visible light.
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Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications
Mario Moreno,N. Delgadillo,Alfonso Torres,Roberto Ambrosio,Pedro Rosales,Andrey Kosarev,C. Reyes-Betanzo,J. de la Hidalga-Wade,Carlos Zuniga,W. Calleja +9 more
TL;DR: In this paper, boron doping of hand polymorphous germanium microbolometers was used to improve the performance of infrared detection, asactivation energy (E a ) and temperature coefficientofresistance (TCR).