Journal ArticleDOI
The conduction properties of the silicon/off-stoichiometry-SiO2 diode
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TLDR
In this paper, the behavior of the silicon/silicon rich oxide diode was studied for both positive and negative bias stressed for N and P substrates, and it was found that the C min in the C - V curves is affected by the charge status of the SRO.Abstract:
The study of the silicon/silicon rich oxide diode is presented. The behaviour of the C - V and the I - V characteristics when the structure is positively and negatively bias stressed for N and P substrates is reported. It is found that the C min in the C - V curves is affected by the charge status of the SRO. A way to estimate the density of traps in the SRO from the C - V curves is proposed. In the case of the I - V curves a comparison between the results obtained for samples deposited on N or P type wafers is performed. The electric characteristics of this device are explained assuming that silicon islands introduce univalent traps in the SRO.read more
Citations
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Journal ArticleDOI
Analysis of surface roughness and its relationship with photoluminescence properties of silicon-rich oxide films
TL;DR: In this paper, the relationship between surface morphology and photoluminescence (PL) spectra of silicon-rich oxide (SRO) has been studied using transmission electronic microscopy and atomic force microscopy.
Journal ArticleDOI
On the origin of light emission in silicon rich oxide obtained by low-pressure chemical vapor deposition
Mariano Aceves-Mijares,A. A. González-Fernández,R. López-Estopier,A. Luna-López,D. Berman-Mendoza,A. Morales,Ciro Falcony,C. Domínguez,Roberto S. Murphy-Arteaga +8 more
TL;DR: In this article, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented.
Journal ArticleDOI
Intense whole area electroluminescence from low pressure chemical vapor deposition-silicon-rich oxide based light emitting capacitors
TL;DR: In this paper, light emitting capacitors (LECs) based on silicon-rich oxide (SRO) were fabricated and its electroluminescent (EL) characteristics were studied.
Journal ArticleDOI
DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films.
Alfredo Morales-Sánchez,Jorge Barreto,C. Domínguez,Mariano Aceves-Mijares,M. Perálvarez,B. Garrido,Jose A. Luna-Lopez +6 more
TL;DR: Electroluminescent properties of silicon-rich oxide (SRO) films were studied using metal oxide semiconductor-(MOS)-like devices and a model based on conductive paths--across the SRO film--has been proposed to explain the EL behaviour in these devices.
Journal ArticleDOI
Single electron charging in Si nanocrystals embedded in silicon-rich oxide
TL;DR: In this article, the authors investigated the charge trapping effect in silicon-rich oxide (SRO) films using capacitance versus voltage, current versus voltage and current versus time measurements in an Al/SRO/Si MOS-like structure.
References
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Journal ArticleDOI
Crystallographic study of semi‐insulating polycrystalline silicon (SIPOS) doped with oxygen atoms
TL;DR: In this article, the size of the microcrystals in as-deposited films was dependent both on the deposition temperature and on the oxygen concentration, and the lattice constant was directly related to their size.
Journal ArticleDOI
Carrier transport in oxygen‐rich polycrystalline‐silicon films
TL;DR: In this paper, a symmetrical Schottky-barrier (SSB) band model is proposed for the carrier transport in oxygen-rich polycrystalline-silicon films.
Journal ArticleDOI
High current injection into SiO2 from Si rich SiO2 films and experimental applications
D. J. DiMaria,D. W. Dong +1 more
TL;DR: In this article, the dependence of this injection mechanism on the Si rich SiO2 composition and thickness, temperature, capacitor area, annealing conditions, gate metal (Al or Au), and underlying SiO 2 thickness is described.
Journal ArticleDOI
Charge transport and trapping phenomena in off‐stoichiometric silicon dioxide films
D. J. DiMaria,D. W. Dong,Ciro Falcony,Thomas N. Theis,John R. Kirtley,J. C. Tsang,D. R. Young,F. L. Pesavento,S. D. Brorson +8 more
TL;DR: In this article, the electrical properties of off-stoichiometric silicon dioxide films have been investigated and it was found that the excess Si is present as amorphous Si islands or small crystallites embedded in silicon dioxide (SiO2) forming a two phase material.