W. Shan

TL;DR: In this paper, the authors present evidence for a strong interaction between the conduction band and a narrow resonant band formed by nitrogen states in alloys, which leads to a splitting of conduction bands into two subbands and a reduction of the fundamental band gap.

TL;DR: In this paper, the optical and electronic properties of the In1−xGaxN alloys have been investigated and shown to exhibit a much higher resistance to high energy (2 MeV) proton irradiation than the standard currently used photovoltaic materials such as GaAs and GaInP, and therefore offer great potential for radiation-hard high-efficiency solar cells for space applications.

TL;DR: In this paper, the fundamental band gap of InN films grown by molecular beam epitaxy have been measured by transmission and photoluminescence spectroscopy as a function of temperature.

TL;DR: In this article, infrared reflection experiments were performed on wurtzite InN films with a range of free-electron concentrations grown by molecular-beam epitaxy, and the results showed a pronounced increase in the electron effective mass with increasing electron concentration, indicating a nonparabolic conduction band in InN.

TL;DR: With multiple band gaps that fall within the solar energy spectrum, Zn(1-y)Mn(y)OxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.