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W. Shan

Researcher at Lawrence Berkeley National Laboratory

Publications -  84
Citations -  7187

W. Shan is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Band gap & Photoluminescence. The author has an hindex of 37, co-authored 84 publications receiving 6978 citations.

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Mutual passivation of group IV donors and nitrogen in diluted GaNxAs1−x alloys

TL;DR: In this paper, an NSF graduate research fellowship was used to support the work of the authors of this paper, and the NSF contract No. DE-AC03-76SF00098 was signed by the Director, Office of Basic Energy Sciences, Division of Materials and Engineering.
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Local structures of free-standing AlxGa1−xN thin films studied by extended x-ray absorption fine structure

TL;DR: In this paper, the LLO work was performed at the UC Berkeley Integrated Materials Laboratory which was supported in part by the National Science Foundation under Contract No. DE-AC03-76SF00098.
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Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

TL;DR: In this paper, the optical absorption edge and the free carrier populations in In{sub x}Ga{sub 1-x}N ternary alloys can be controlled using high energy He{sup 4}He{sup +} irradiation.
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Pressure dependence of optical transitions in In 0.15 Ga 0.85 N/GaN multiple quantum wells

TL;DR: In this paper, the effects of hydrostatic pressure on optical transitions in multiple quantum wells (MQW's) have been studied and it was shown that the optical transition associated with confined electron and hole states in the MQW's was found to shift linearly to higher energy with pressure but exhibit a significantly weaker pressure dependence compared to bulklike thick epitaxial-layer samples.
Journal Article

Nature of Room-temperature Photoluminescence in ZnO

TL;DR: In this paper, the temperature dependence of photoluminescence transitions associated with various excitons and their phonon replicas in high-purity bulk ZnO has been studied at temperatures from 12 K to above room temperature (320 K).