Diluted II-VI Oxide Semiconductors with Multiple Band Gaps
Kin Man Yu,Wladek Walukiewicz,Junqiao Wu,W. Shan,Jeffrey W. Beeman,Michael A. Scarpulla,Michael A. Scarpulla,Oscar D. Dubon,Oscar D. Dubon,P. Becla +9 more
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TLDR
With multiple band gaps that fall within the solar energy spectrum, Zn(1-y)Mn(y)OxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.Abstract:
We report the realization of a new mult-band-gap semiconductor. Zn(1-y)Mn(y)OxTe1-x alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn(1-y)Mn(y)Te host. When only 1.3% of Te atoms are replaced with oxygen in a Zn0.88Mn0.12Te crystal the resulting band structure consists of two direct band gaps with interband transitions at approximately 1.77 and 2.7 eV. This remarkable modification of the band structure is well described by the band anticrossing model. With multiple band gaps that fall within the solar energy spectrum, Zn(1-y)Mn(y)OxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.read more
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Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons
Sefaattin Tongay,Joonki Suh,Joonki Suh,Can Ataca,Wen Fan,A. V. Luce,A. V. Luce,Jeong Seuk Kang,Jonathan Liu,Changhyun Ko,Rajamani Raghunathanan,Jian Zhou,Frank Ogletree,Jingbo Li,Jeffrey C. Grossman,Junqiao Wu,Junqiao Wu,Junqiao Wu +17 more
TL;DR: This work investigates effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by α-particle irradiation or thermal-annealing and finds a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation.
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Understanding intermediate-band solar cells
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Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
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TL;DR: In this article, the anion vacancies in II-VI and chalcopyrite semiconductors were identified as a class of intrinsic defects that can exhibit metastable behavior.
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The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept
Antonio Luque,Antonio Martí +1 more
TL;DR: The intermediate band (IB) solar cell has been proposed to increase the current of solar cells while at the same time preserving the output voltage in order to produce an efficiency that ideally is above the limit established by Shockley and Queisser in 1961.
Journal ArticleDOI
Intermediate band solar cells: Recent progress and future directions
Yoshitaka Okada,Ned Ekins-Daukes,Takashi Kita,Ryo Tamaki,Megumi Yoshida,Andreas Pusch,Ortwin Hess,Chris Phillips,Daniel J. Farrell,Katsuhisa Yoshida,Nazmul Ahsan,Yasushi Shoji,Tomah Sogabe,Jean-François Guillemoles,Jean-François Guillemoles +14 more
TL;DR: In this paper, a detailed discussion on the thermodynamics of solar energy conversion in IBSCs, the device physics, and the carrier dynamics processes with a particular emphasis on the two-step inter-subband absorption/recombination processes that are of paramount importance in a successful implementation high-efficiency IBSC.
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