W
W. Shan
Researcher at Lawrence Berkeley National Laboratory
Publications - 84
Citations - 7187
W. Shan is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Band gap & Photoluminescence. The author has an hindex of 37, co-authored 84 publications receiving 6978 citations.
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Journal ArticleDOI
Band Anticrossing in GaInNAs Alloys
W. Shan,Wladek Walukiewicz,Joel W. Ager,Eugene E. Haller,J. F. Geisz,Daniel J. Friedman,J. M. Olson,Sarah Kurtz +7 more
TL;DR: In this paper, the authors present evidence for a strong interaction between the conduction band and a narrow resonant band formed by nitrogen states in alloys, which leads to a splitting of conduction bands into two subbands and a reduction of the fundamental band gap.
Journal ArticleDOI
Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system
Junqiao Wu,Wladek Walukiewicz,Kin Man Yu,W. Shan,Joel W. Ager,Eugene E. Haller,Hai Lu,William J. Schaff,Wyatt K. Metzger,Sarah Kurtz +9 more
TL;DR: In this paper, the optical and electronic properties of the In1−xGaxN alloys have been investigated and shown to exhibit a much higher resistance to high energy (2 MeV) proton irradiation than the standard currently used photovoltaic materials such as GaAs and GaInP, and therefore offer great potential for radiation-hard high-efficiency solar cells for space applications.
Journal ArticleDOI
Temperature dependence of the fundamental band gap of InN
Junqiao Wu,Wladek Walukiewicz,W. Shan,Kin Man Yu,Joel W. Ager,S. X. Li,E. E. Haller,Hai Lu,William J. Schaff +8 more
TL;DR: In this paper, the fundamental band gap of InN films grown by molecular beam epitaxy have been measured by transmission and photoluminescence spectroscopy as a function of temperature.
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Effects of the narrow band gap on the properties of InN
Junqiao Wu,Junqiao Wu,Wladek Walukiewicz,W. Shan,Kin Man Yu,Joel W. Ager,Eugene E. Haller,Eugene E. Haller,Hai Lu,William J. Schaff +9 more
TL;DR: In this article, infrared reflection experiments were performed on wurtzite InN films with a range of free-electron concentrations grown by molecular-beam epitaxy, and the results showed a pronounced increase in the electron effective mass with increasing electron concentration, indicating a nonparabolic conduction band in InN.
Journal ArticleDOI
Diluted II-VI Oxide Semiconductors with Multiple Band Gaps
Kin Man Yu,Wladek Walukiewicz,Junqiao Wu,W. Shan,Jeffrey W. Beeman,Michael A. Scarpulla,Michael A. Scarpulla,Oscar D. Dubon,Oscar D. Dubon,P. Becla +9 more
TL;DR: With multiple band gaps that fall within the solar energy spectrum, Zn(1-y)Mn(y)OxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.