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Warren K. Waskiewicz

Researcher at Alcatel-Lucent

Publications -  52
Citations -  320

Warren K. Waskiewicz is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: Electron-beam lithography & Lithography. The author has an hindex of 10, co-authored 52 publications receiving 320 citations. Previous affiliations of Warren K. Waskiewicz include Agere Systems & AT&T.

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Patent

Illumination system for electron beam lithography tool

TL;DR: In this article, a method and apparatus for controlling beam emittance by placing a quadrupole lens array in a drift space of an illumination system component was proposed, which can permit independent control of beam current and beam emission, which is beneficial in a Scalpel illumination system.
Patent

Masks with low stress multilayer films and a process for controlling the stress of multilayer films

TL;DR: In this paper, a process for controlling the stress of multilayer films formed on a substrate is disclosed, where a plurality of periods, each period having at least two layers of material wherein one of the layers is under compressive stress and the other layer of material is under tensile stress, are formed in a substrate.
Patent

Method for repairing an optical element which includes a multilayer coating

TL;DR: In this paper, a method for repairing an optical system of the kind described above, in which the optical element comprises a substrate having a principal surface, a layer of chromium overlying the principal surface and a first layer of iridium overlying a chromium layer, was proposed.
Journal ArticleDOI

The SCattering with Angular Limitation in Projection Electron-Beam Lithography (SCALPEL) System

TL;DR: A SCALPEL\circledR (SCattering with Angular Limitation in Projection Electron-beam Lithography) proof-of-concept system, comprising a tool, a reticle and a resist, has been designed to address the critical issues that must be investigated to determine if this approach is viable as a practical lithographic technology as mentioned in this paper.
Journal ArticleDOI

A background dose proximity effect correction technique for scattering with angular limitation projection electron lithography implemented in hardware

TL;DR: In this article, a background dose proximity effect correction procedure is proposed that utilizes the unique way image contrast is formed in scattering with angular limitation projection electron lithography (SCALPEL(R)).