Graphene plasmons were predicted to possess ultra-strong field confinement and very low damping at the same time, enabling new classes of devices for deep subwavelength metamaterials, single-photon nonlinearities, extraordinarily strong light-matter interactions and nano-optoelectronic switches. While all of these great prospects require low damping, thus far strong plasmon damping was observed, with both impurity scattering and many-body effects in graphene proposed as possible explanations. With the advent of van der Waals heterostructures, new methods have been developed to integrate graphene with other atomically flat materials. In this letter we exploit near-field microscopy to image propagating plasmons in high quality graphene encapsulated between two films of hexagonal boron nitride (h-BN). We determine dispersion and particularly plasmon damping in real space. We find unprecedented low plasmon damping combined with strong field confinement, and identify the main damping channels as intrinsic thermal phonons in the graphene and dielectric losses in the h-BN. The observation and in-depth understanding of low plasmon damping is the key for the development of graphene nano-photonic and nano-optoelectronic devices.

Highly confined low-loss plasmons in graphene-boron nitride heterostructures

Two-dimensional (2D) materials have generated great interest in the past few years as a new toolbox for electronics. This family of materials includes, among others, metallic graphene, semiconducting transition metal dichalcogenides (such as MoS2), and insulating boron nitride. These materials and their heterostructures offer excellent mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic, sensing, and optical systems on arbitrary surfaces. In this paper, we demonstrate a novel technology for constructing large-scale electronic systems based on graphene/molybdenum disulfide (MoS2) heterostructures grown by chemical vapor deposition. We have fabricated high-performance devices and circuits based on this heterostructure, where MoS2 is used as the transistor channel and graphene as contact electrodes and circuit interconnects. We provide a systematic comparison of the graphene/MoS2 heterojunction contact to more traditional MoS2-metal junctions, as well as a theoretical investigation, using density functional theory, of the origin of the Schottky barrier height. The tunability of the graphene work function with electrostatic doping significantly improves the ohmic contact to MoS2. These high-performance large-scale devices and circuits based on this 2D heterostructure pave the way for practical flexible transparent electronics.

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Graphene-MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

The support plays an important role for supported metal catalysts by positioning itself as a macromolecular ligand, which conditions the nature of the active site and contributes indirectly but also sometimes directly to the reactivity. Metal species such as nanoparticles, clusters, or single atoms can be deposited on carbon materials for various catalytic reactions. All the carbon materials used as catalyst support constitute a large family of compounds that can vary both at textural and at structural levels. Today, the recent developments of well-controlled synthesis methodologies, advanced characterization techniques, and modeling tools allow one to correlate the relationships between metal/support/reactant at the molecular level. Based on these considerations, in this Review article, we wish to provide some answers to the question "How and why anchoring metal nanoparticles, clusters, or single atoms on carbon materials for catalysis?". To do this, we will rely on both experimental and theoretical studies. We will first analyze what sites are available on the surface of a carbon support for the anchoring of the active phase. Then, we will describe some important effects in catalysis inherent to the presence of a carbon-type support (metal-support interaction, confinement, spillover, and surface functional group effects). These effects will be commented on by putting into perspective catalytic results obtained in numerous reactions of thermal catalysis, electrocatalysis, or photocatalysis.

A Theory/Experience Description of Support Effects in Carbon-Supported Catalysts.

A first-principles investigation of the electronic properties of boron nitride nanoribbons (BNNRs) having either armchair or zigzag shaped edges passivated by hydrogen with widths up to 10 nm is presented. Band gaps of armchair BNNRs exhibit family dependent oscillations as the width increases and, for ribbons wider than 3 nm, converge to a constant value that is 0.02 eV smaller than the bulk band gap of a boron nitride sheet owing to the existence of very weak edge states. The band gap of zigzag BNNRs monotonically decreases and converges to a gap that is 0.7 eV smaller than the bulk gap due to the presence of strong edge states. When a transverse electric field is applied, the band gaps of armchair BNNRs decrease monotonically with the field strength. For the zigzag BNNRs, however, the band gaps and the carrier effective masses either increase or decrease depending on the direction and the strength of the field.

/pdf/energy-gaps-and-stark-effects-in-boron-nitride-nanoribbons-ks761kghpx.pdf

Energy gaps and Stark effects in boron nitride nanoribbons

The interaction of Li(+) with single and few layer graphene is reported. In situ Raman spectra were collected during the electrochemical lithiation of the single- and few-layer graphene. While the interaction of lithium with few layer graphene seems to resemble that of graphite, single layer graphene behaves very differently. The amount of lithium absorbed on single layer graphene seems to be greatly reduced due to repulsion forces between Li(+) at both sides of the graphene layer.

http://ma.ecsdl.org/content/MA2010-02/6/375.full.pdf

The Interaction of Li+ with Single-Layer and Few Layers Graphene

Using the first-principle calculations, we study the electronic structures of graphene/WS2 van der Waals (vdW) heterostructures by applying an external electric field (Eext) perpendicular to the heterobilayers. It is demonstrated that the intrinsic electronic properties of graphene and WS2 are quite well preserved due to the weak vdW contact. We find that n-type Schottky contacts with a significantly small Schottky barrier are formed at the graphene/WS2 interface and p-type (hole) doping in graphene occurs during the formation of graphene/WS2 heterostructures. Moreover, the Eext is effective to tune the Schottky contacts, which can transform the n-type into p-type and ohmic contact. Meanwhile, p-type (hole) doping in graphene is enhanced under negative Eext and a large positive Eext is required to achieve n-type (electron) doping in graphene. The Eext can control not only the amount of charge transfer but also the direction of charge transfer at the graphene/WS2 interface. The present study would open a new avenue for application of ultrathin graphene/WS2 heterostructures in future nano- and optoelectronics.

/pdf/tuning-the-schottky-contacts-at-the-graphene-ws2-interface-lyn17gu9yt.pdf

Tuning the Schottky contacts at the graphene/WS2 interface by electric field

Using density functional theory calculations, we investigate the electronic properties of arsenene/graphene van der Waals (vdW) heterostructures by applying external electric field perpendicular to the layers. It is demonstrated that weak vdW interactions dominate between arsenene and graphene with their intrinsic electronic properties preserved. We find that an n-type Schottky contact is formed at the arsenene/graphene interface with a Schottky barrier of 0.54 eV. Moreover, the vertical electric field can not only control the Schottky barrier height but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the interface. Tunable p-type doping in graphene is achieved under the negative electric field because electrons can transfer from the Dirac point of graphene to the conduction band of arsenene. The present study would open a new avenue for application of ultrathin arsenene/graphene heterostructures in future nano- and optoelectronics.

Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field

Band structure engineering in a MoS2/PbI2 van der Waals (vdW) heterostructure under an external electric field (Efield) is investigated using density functional theory (DFT). It is demonstrated that the MoS2/PbI2 vdW heterostructure has a type-II heterojunction with a direct bandgap, and thus the lowest energy electron–hole pairs are spatially separated. Meanwhile, the band structure could be effectively modulated under an Efield and the bandgap shows linear variations with the Efield, indicating a giant Stark effect. This gets further support from the band edges of MoS2 and PbI2 in the heterostructure. Moreover, the MoS2/PbI2 vdW heterostructure experiences transitions from type-II to type-I and then to type-II under various Efields. Our calculated results pave the way for experimental research and provide a new perspective for the application of the vdW heterostructure in electronic and optoelectronic devices.

Band structure engineering in a MoS2/PbI2 van der Waals heterostructure via an external electric field

By means of density functional theory computations, we study band-gap tuning in multi-layer WSe2 sheets by external electric fields It shows that the fundamental band gap of WSe2 film continuously decreases with an increasing vertical electric field, eventually rendering them metallic The critical electric fields, at which the semiconductor-to-metal transition occurs, are predicted to be in the range of 06–2 V/nm depending on the number of layers This gap-tuning effect yields a robust relationship, which is essentially characterized by the giant Stark effect (GSE) coefficient S, for the rate of change of band gap with applied external field The GSE coefficient S is proportional to the number of layers and it can be expressed as (n − 1)c/2

Wei Li

Papers

Tuning the Schottky contacts at the graphene/WS2 interface by electric field

Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field

Band structure engineering in a MoS2/PbI2 van der Waals heterostructure via an external electric field

Bandstructure modulation of two-dimensional WSe2 by electric field

Effects of electric field on the electronic structures of MoS2/arsenene van der Waals heterostructure