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Wen-Hao Chang
Researcher at National Chiao Tung University
Publications - 221
Citations - 10470
Wen-Hao Chang is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Quantum dot & Photoluminescence. The author has an hindex of 40, co-authored 198 publications receiving 8522 citations. Previous affiliations of Wen-Hao Chang include National Central University & Chung Yuan Christian University.
Papers
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Journal ArticleDOI
Nitride-stressor and quantum-size engineering in ge quantum-dot photoluminescence wavelength and exciton lifetime
Yu Hong Kuo,Shih Hsuan Chiu,Che Wei Tien,Sheng-Di Lin,Wen-Hao Chang,Thomas George,Horng-Chih Lin,Pei-Wen Li +7 more
TL;DR: In this paper, the effects of local stressors and quantum confinement on the strain and optical properties of Ge QDs were systematically investigated using Raman and PL measurements, and it was shown that when Ge QD diameter gets smaller than 60 nm, quantum confinement sets in and has a predominant influence on PL wavelength and exciton lifetime.
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Influences of Contact Metals on the Performances of MoS2 Devices under Strains
Sian Hong Tseng,Hung-Yi Chen,Wei Ting Hsu,Hsiang-Chen Wang,Yuan-Yao Li,Wen-Hao Chang,Ming-Pei Lu,Ming-Yen Lu +7 more
TL;DR: In this article, the growth of large area MoS2 films was achieved through atmospheric pressure chemical vapor deposition via vapor management in a large-area MoS 2 film. But the thickness of the MoS1 film changed upon varying the a...
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The structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition.
S. F. Fu,S. M. Wang,L. Lee,C. Y. Chen,Wan-Lin Tsai,Wu-Ching Chou,M. C. Lee,Wen-Hao Chang,Wei-Kuo Chen +8 more
TL;DR: The physical properties of MOCVD-grown InN nanodots are sensitive to the surface structure and the morphology is very similar to molecular beam epitaxially grown GaN and InN films, which may be used as a guide to optimize the InN growth.
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Optical properties of Mn in regrown GaN-based epitaxial layers
Feng Wen Huang,Jinn-Kong Sheu,Shang Ju Tu,Po Cheng Chen,Yu Hsiang Yeh,Ming-Lun Lee,Wei-Chih Lai,Wen Che Tsai,Wen-Hao Chang +8 more
TL;DR: In this article, the memory effect and redistribution of manganese (Mn) into subsequently regrown GaN-based epitaxial layers by metalorganic chemical vapor deposition were revealed.
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Stacking fault induced tunnel barrier in platelet graphite nanofiber
Yann Wen Lan,Wen-Hao Chang,Wen-Hao Chang,Yuan-Yao Li,Yuan-Chih Chang,Chia-Seng Chang,Chii-Dong Chen +6 more
TL;DR: In this article, a correlation study using image inspection and electrical characterization of platelet graphite nanofiber devices is conducted, and it is shown that a stacking fault can behave as a tunnel barrier for conducting electrons and is responsible for the observed double-island single electron transistor characteristics.