Wengang Bi

TL;DR: Lasing in a strongly guided semiconductor waveguide with mode area as small as 0.02 pm' (A = 1.4 pm) is achieved and the lasing behaviors are consistent with theory.

TL;DR: In this article, the dependence of nitrogen incorporation on growth temperature and In content has been determined and the intensity of room temperature photoluminescence (RT) emission from as-grown GaAsN layers was found to decrease with increasing N content.

TL;DR: In this paper, the barrier height of the p-type electron blocking layer (p-EBL) for ∼273 nm deep ultraviolet light-emitting diodes (DUV LEDs) is modified by employing a p-Al0.60Ga0.40N/Al 0.50 Ga0.50N/p-Al 0.,60Ga 0.40 N structure, in which the very thin Al0. 50Ga0.,40N layer is able to achieve a high local hole concentration, which is very effective in reducing the effective barrier height for holes.

TL;DR: The possibility of a direct aqueous synthesis of CH3 NH3 PbX3 (X=Br or Cl/Br) nanocrystals through the reaction between the lead halide complex and methylamine when the pH is maintained in the range of 0-5 is demonstrated.

TL;DR: For the first time, full-color stimuli-responsive inks for information coding, encryption, and decryption are reported, which rely on the facile preparation and conversion of perovskite quantum dots.