Since the discovery of highly conducting polyacetylene by Shirakawa, MacDiarmid, and Heeger in 1977, π-conjugated systems have attracted much attention as futuristic materials for the development and production of the next generation of electronics, that is, organic electronics. Conceptually, organic electronics are quite different from conventional inorganic solid state electronics because the structural versatility of organic semiconductors allows for the incorporation of functionality by molecular design. This versatility leads to a new era in the design of electronic devices. To date, the great number of π-conjugated semiconducting materials that have either been discovered or synthesized generate an exciting library of π-conjugated systems for use in organic electronics. 11 However, some key challenges for further advancement remain: the low mobility and stability of organic semiconductors, the lack of knowledge regarding structure property relationships for understanding the fundamental chemical aspects behind the structural design, and realization of desired properties. Organic field-effect transistors (OFETs) are a kind of device consisting of an organic semiconducting layer, a gate insulator layer, and three terminals (drain, source, and gate electrodes). OFETs are not only essential building blocks for the next generation of cheap and flexible organic circuits, but they also provide an important insight into the charge transport of πconjugated systems. Therefore, they act as strong tools for the exploration of the structure property relationships of πconjugated systems, such as parameters of field-effect mobility (μ, the drift velocity of carriers under unit electric field), current on/off ratio (the ratio of the maximum on-state current to the minimum off-state current), and threshold voltage (the minimum gate voltage that is required to turn on the transistor). 17 Since the discovery of OFETs in the 1980s, they have attracted much attention. Research onOFETs includes the discovery, design, and synthesis of π-conjugated systems for OFETs, device optimization, development of applications in radio frequency identification (RFID) tags, flexible displays, electronic papers, sensors, and so forth. It is beyond the scope of this review to cover all aspects of π-conjugated systems; hence, our focus will be on the performance analysis of π-conjugated systems in OFETs. This should make it possible to extract information regarding the fundamental merit of semiconducting π-conjugated materials and capture what is needed for newmaterials and what is the synthesis orientation of newπ-conjugated systems. In fact, for a new science with many practical applications, the field of organic electronics is progressing extremely rapidly. For example, using “organic field effect transistor” or “organic field effect transistors” as the query keywords to search the Web of Science citation database, it is possible to show the distribution of papers over recent years as shown in Figure 1A. It is very clear

Semiconducting π-conjugated systems in field-effect transistors: a material odyssey of organic electronics.

Functionalized acenes and heteroacenes for organic electronics.

Electron and ambipolar transport in organic field-effect transistors.

It is now widely accepted that skin sensitivity will be very important for future robots used by humans in daily life for housekeeping and entertainment purposes Despite this fact, relatively little progress has been made in the field of pressure recognition compared to the areas of sight and voice recognition, mainly because good artificial “electronic skin” with a large area and mechanical flexibility is not yet available The fabrication of a sensitive skin consisting of thousands of pressure sensors would require a flexible switching matrix that cannot be realized with present silicon-based electronics Organic field-effect transistors can substitute for such conventional electronics because organic circuits are inherently flexible and potentially ultralow in cost even for a large area Thus, integration of organic transistors and rubber pressure sensors, both of which can be produced by low-cost processing technology such as large-area printing technology, will provide an ideal solution to realize a practical artificial skin, whose feasibility has been demonstrated in this paper Pressure images have been taken by flexible active matrix drivers with organic transistors whose mobility reaches as high as 14 cm2/V·s The device is electrically functional even when it is wrapped around a cylindrical bar with a 2-mm radius

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A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications

Acenes have long been the subject of intense study because of the unique electronic properties associated with their pi-bond topology. Recent reports of impressive semiconductor properties of larger homologues have reinvigorated research in this field, leading to new methods for their synthesis, functionalization, and purification, as well as for fabricating organic electronic components. Studies performed on high-purity acene single crystals revealed their intrinsic electronic properties and provide useful benchmarks for thin film device research. New approaches to add functionality were developed to improve the processability of these materials in solution. These new functionalization strategies have recently allowed the synthesis of acenes larger than pentacene, which have hitherto been largely unavailable and poorly studied, as well as investigation of their associated structure/property relationships.

The larger acenes: versatile organic semiconductors.

The invention relates to a magnetoresistive memory and is characterized by a control circuit (1) with a first pole which, via a reading distributor (14), can be individually connected to first ends of bit lines (4a, 4b) by means of switching elements (8a, 8b). Said control circuit also has a second pole, which supplies power to an evaluator (2), and has a third pole that is connected to a reference voltage source (U5). The readout circuit additionally comprises a third voltage source (U3) having a voltage, which is approximately equal to the voltage of the first reading voltage source (U1) and which can be individually connected to second ends of the bit lines (4a, 4b) by means of switching elements (9a, 9b). Finally, the readout circuit comprises a fourth voltage source (U4), which can be individually connected to second ends of the word lines (5a, 5b) by means of switching elements (7a, 7b).

Magnetoresistive memory and method for reading out from the same

Arrangement comprises a substrate (1) having at least one recess (3); and at least one chip (2) provided in the recess. At least one of the peripheral surfaces of the chips protruding into the recess and/or at least one peripheral surface of the recess has a layer formed in such as way that an attraction produced on placing the chip in the recess is amplified between the chip and recess. An Independent claim is also included for a process for the production of the arrangement. Preferred Features: The layer formed on the chip and/or in the recess is structured. The layer is monomolecular and hydrophobic. The layer is treated with silanes or thiolenes.

Arrangement used in the manufacture of matrix displays comprises a substrate having a recess, and a chip provided in the recess with a layer formed on the peripheral surface of the recess and/or chip

Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.

MEMS devices and methods of manufacture thereof

A processor arrangement having a plurality of processor units and a control computer. Each of the processor units is connected to at least one adjacent processor unit and has one control element and at least one communications interface for providing a data communications link with an adjacent processor unit. The control computer is connected to one of the processor units, and is configured for exchanging information with the processor unit and for assigning one control element of the plurality of control elements to a device that is electrically connected to the processor arrangement for the control of the device.

Processor array arrangement controlled by control computer

The invention relates to a weighting circuit for an MRAM. Said weighting circuit, in interaction with two adjacent reference cells, provides a simple means for substantially improving the weighting accuracy.

Werner Weber

Papers

Magnetoresistive memory and method for reading out from the same

Arrangement used in the manufacture of matrix displays comprises a substrate having a recess, and a chip provided in the recess with a layer formed on the peripheral surface of the recess and/or chip

MEMS devices and methods of manufacture thereof

Processor array arrangement controlled by control computer

Device for weighting the cell resistances in a magnetoresistive memory