Wolfgang Raberg

TL;DR: In this article, the potential of spintronics in four key areas of application (memory, sensors, microwave devices, and logic devices) is examined and the challenges that need to be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms.

TL;DR: In this paper, the authors examine the origin of magnetic noise in magnetoresistive sensors and show that a topologically protected magnetic vortex state in the transducer element can be used to overcome these limitations.

TL;DR: In this article, a diffusion barrier is used between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the memory cell.

TL;DR: In this paper, a magnetic field sensor structure including a first magnetoresistive element in a spin-valve arrangement with a first reference layer structure with first reference magnetization direction, and a second magnetoregressive element with a second reference surface structure with second reference magnetisation direction, where the first and second elements are arranged in a layer vertically above each other and galvanically isolated from each other by an intermediate layer.

TL;DR: A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate as mentioned in this paper, where the first free layer and the second free layer are separated by a portion of the electrically-insulating layer.