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Werner Wesch
Researcher at University of Jena
Publications - 264
Citations - 4889
Werner Wesch is an academic researcher from University of Jena. The author has contributed to research in topics: Ion implantation & Ion. The author has an hindex of 36, co-authored 264 publications receiving 4632 citations. Previous affiliations of Werner Wesch include Schiller International University & Australian National University.
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Ion-beam induced damage and annealing behaviour in SiC
TL;DR: In this article, a defect-interaction and amorphization model is used to analyse the dose dependence of defect production, as obtained by the various methods, and a critical implantation temperature is obtained, which was found to vary with the ion mass and the implantation energy.
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Silicon carbide: Synthesis and processing
TL;DR: In this paper, the authors summarized some aspects of crystal growth and processing and discussed arising problems in the process of crystallizing silicon carbide, a material of choice for special optoelectronic and electronic devices working under extreme conditions.
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Amorphous silicon exhibits a glass transition.
TL;DR: It is demonstrated that during irradiation with high-energy heavy ions amorphous silicon deforms plastically in the same way as conventional glasses, providing experimental evidence for the existence of a low-density liquid.
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Effect of high electronic energy deposition in semiconductors
TL;DR: In this paper, the effect of high electronic energy deposition represents itself as a competition between damage formation and annealing, and it can be concluded that the two processes dominate is mainly determined by the electronic energy.
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Damage formation and annealing at low temperatures in ion implanted ZnO
TL;DR: In this article, N, Ar, and Er ions were implanted into ZnO at 15 K within a large fluence range, and the Rutherford backscattering technique in the channeling mode was used to study in situ the damage built-up in the Zn sublattice.