William D. Goodhue

TL;DR: In this paper, a method of producing electronic device packages is provided, consisting of the steps of shaping a package preform and heating the package pretrain in a nitrogen-containing atmoshpere to nitride the preform.

TL;DR: Avalanche photodiodes have been demonstrated utilizing GaN grown by hydride vapor-phase epitaxy as discussed by the authors, and the external quantum efficiency at unity gain is measured to be 35%.

TL;DR: In this paper, the slab-coupled optical waveguide laser (SCOWL) concept was extended to the AlGaAs-InGaas-GaAs material system.

TL;DR: In this paper, an improved two-dimensional semiconductor surface-emitting laser array is described in which two intra-cavity internal reflecting surfaces are formed at a 45° angle to the plane of the active layer of the semiconductor laser so as to internally reflect light from each end of the SLS in a direction normal to the point of interest with a buried reflective mirror provided in the path of one of said reflections, so that to transmit reflected light back through the laser and out the top surface of the array.

TL;DR: In this paper, the vertical sidewalls of narrow GaAs structures were investigated and it was found that saturation current depends on the dry etching conditions such as ion energy, etching species, and impurity redeposition.