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William L. Warren
Researcher at Sandia National Laboratories
Publications - 177
Citations - 12721
William L. Warren is an academic researcher from Sandia National Laboratories. The author has contributed to research in topics: Electron paramagnetic resonance & Thin film. The author has an hindex of 49, co-authored 177 publications receiving 12307 citations. Previous affiliations of William L. Warren include University of New Mexico & United States Army Research Laboratory.
Papers
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Mechanisms behind green photoluminescence in ZnO phosphor powders
Karel Vanheusden,William L. Warren,Carleton H. Seager,David R. Tallant,J. A. Voigt,Bruce E. Gnade +5 more
TL;DR: In this article, the authors explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen vacancy density in commercial ZnO phosphors by combining photoluminescence, optical absorption, and electron paramagnetic resonance spectroscopies.
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Correlation between photoluminescence and oxygen vacancies in ZnO phosphors
TL;DR: By combining electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy, a strong correlation is observed between the green 510 nm emission, the free-carrier concentration, and the density of singly ionized oxygen vacancies in commercial ZnO phosphor powders as mentioned in this paper.
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Electronic domain pinning in Pb(Zr,Ti)O3 thin films and its role in fatigue
TL;DR: In this article, it was shown that the suppressed polarization can be restored to essentially its initial polarization value by injecting electronic charge carriers into the ferroelectric, which strongly suggests that all three forms of degradation involve locking domains by electronic charge trapping centers.
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Oxygen Vacancy Motion in Perovskite Oxides
TL;DR: Using electron paramagnetic resonance, the motion of oxygen vacancies within the oxygen octahedron in perovskite BaTiO{sub 3} is observed via the alignment of oxygen vacancy-related defect dipoles induced by bias/heat combinations.
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Photoinduced hysteresis changes and optical storage in (Pb,La)(Zr,Ti)O3 thin films and ceramics
TL;DR: In this article, photo-induced changes in thin films and bulk ceramics are shown to give rise to stable and reproducible hysteresis changes and thus, either could be the basis of an optical memory.