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Winston V. Schoenfeld
Researcher at University of Central Florida
Publications - 216
Citations - 7197
Winston V. Schoenfeld is an academic researcher from University of Central Florida. The author has contributed to research in topics: Quantum dot & Photoluminescence. The author has an hindex of 32, co-authored 212 publications receiving 6687 citations. Previous affiliations of Winston V. Schoenfeld include University of California, Santa Barbara.
Papers
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Journal ArticleDOI
Magnetic field effects on optical and transport properties in InAs/GaAs quantum dots
Mats Larsson,Evgenii Moskalenko,L. A. Larsson,Per-Olof Holtz,Claudio Verdozzi,Carl-Olof Almbladh,Winston V. Schoenfeld,Pierre Petroff +7 more
TL;DR: In this paper, a photoluminescence study of self-assembled InAs/GaAs quantum dots under the influence of magnetic fields perpendicular and parallel to the dot layer is presented.
Proceedings ArticleDOI
Detecting loss mechanisms of c-Si PV modules in-situ I-V measurement
TL;DR: In this paper, the authors proposed a method to quantify the power loss of PV modules due to different degradation mechanisms, including series resistance (R s ) loss, non-uniform shunting loss and number of shunted cells, uniform shavings loss, uniform current loss, notuniform current (mismatch) loss, recombination current (J 01 and J 02 ) losses of a PV module.
Journal ArticleDOI
Investigation and impact of oxygen plasma compositions on cubic ZnMgO grown by Molecular Beam Epitaxy
TL;DR: In this article, the impact on the cubic cubic cubic ZnMgO of oxygen flow rate and applied RF power was investigated under a high vacuum condition (1E-6 Torr), optical emission spectroscopy identified active species in the plasma including O, O +, and O þ 2.
Patent
Cubic semiconductor alloys for deep uv applications
TL;DR: A cubic epitaxial article and electronic devices therefrom includes a single crystal cubic oxide substrate having a substrate band gap and a top surface as discussed by the authors, and a cubic cubic oxide alloy layer that includes at least one transition metal or group IIA metal disposed on the top surface of the substrate.
Journal ArticleDOI
Surface Damage Introduced by Diamond Wire Sawing of Si Wafers: Measuring in-depth and the Lateral Distributions for Different Cutting Parameters
Bhushan Sopori,Srinivas Devayajanam,Srinivas Devayajanam,Prakash Basnyat,Prakash Basnyat,Rekha Schnepf,Santosh K. Sahoo,Santosh K. Sahoo,James M. Gee,Ferdinando Severico,Hubert Seigneur,Winston V. Schoenfeld,Steve Preece,Jeff Binns,Jesse Appel,Kaitlyn VanSant +15 more
TL;DR: In this paper, the authors describe the characteristics of damage introduced under different conditions of diamond wire sawing on the Si wafer surfaces, which occurs in the form of frozen-in dislocations, phase changes, and micro-cracks.