Woojin Choi

TL;DR: Strain engineering of α-formamidinium lead iodide (α-FAPbI 3) is investigated using both experimental techniques and theoretical calculations, and it is demonstrated that a compressive strain effectively changes the crystal structure, reduces the bandgap and increases the hole mobility of α -FAPBI 3.

TL;DR: A solution-based lithography-assisted epitaxial-growth-and-transfer method is used to fabricate single-crystal hybrid perovskites on any surface, with precise control of the thickness, area and chemical composition gradient.

TL;DR: In this article, a SiNx/HfO2 dual gate insulator was used to fabricate gate recessed normally-off AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors, which achieved excellent characteristics such as large threshold voltage of 1.65 V, high breakdown voltage of 900 V, extremely small off-state drain leakage current less than 10-9 A/mm and high ON/OFF drain current ratio of ~ 109, low on-state resistance of 2.84 mΩ·cm2, and

TL;DR: The first chemical epitaxial growth of single crystal CH3 NH3 PbBr3 with controlled locations, morphologies, and orientations, using combined strategies of advanced microfabrication, homoepitaxy, and low temperature solution method is reported.

TL;DR: In this paper, a plasma enhanced atomic layer deposition technique was successfully employed for very thin SiNx (5 nm) as an interfacial layer to reduce the threshold voltage instability in gate recessed normally-off GaN metal insulator semiconductor high electron mobility transistors with SiNix gate insulator.