Improvement of $V_{\rm th}$ Instability in Normally-Off GaN MIS-HEMTs Employing ${\rm PEALD}\hbox{-}{\rm SiN}_{\rm x}$ as an Interfacial Layer

TLDR: In this paper, a plasma enhanced atomic layer deposition technique was successfully employed for very thin SiNx (5 nm) as an interfacial layer to reduce the threshold voltage instability in gate recessed normally-off GaN metal insulator semiconductor high electron mobility transistors with SiNix gate insulator.

Abstract: In this letter, reduction of threshold voltage instability in gate recessed normally-off GaN metal insulator semiconductor high electron mobility transistors with SiNx gate insulator was investigated. A plasma enhanced atomic layer deposition technique was successfully employed for very thin SiNx (5 nm) as an interfacial layer. The hysteresis and drift of threshold voltage in transfer curve and the forward biased gate leakage current were effectively reduced.