With a global market share of about 90%, crystalline silicon is by far the most important photovoltaic technology today. This article reviews the dynamic field of crystalline silicon photovoltaics from a device-engineering perspective. First, it discusses key factors responsible for the success of the classic dopant-diffused silicon homojunction solar cell. Next it analyzes two archetypal high-efficiency device architectures – the interdigitated back-contact silicon cell and the silicon heterojunction cell – both of which have demonstrated power conversion efficiencies greater than 25%. Last, it gives an up-to-date summary of promising recent pathways for further efficiency improvements and cost reduction employing novel carrier-selective passivating contact schemes, as well as tandem multi-junction architectures, in particular those that combine silicon absorbers with organic–inorganic perovskite materials.

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High-efficiency crystalline silicon solar cells: status and perspectives

Photovoltaic solar cells based on metal halide perovskites have gained considerable attention over the past decade because of their potentially low production cost, earth-abundant raw materials, ease of fabrication and ever-increasing power conversion efficiencies of up to 25.2%. This type of solar cells offers the promise of generating electricity at a more competitive unit price than traditional fossil fuels by 2035. Nevertheless, the best research cell efficiencies are still below the theoretical limit defined by the Shockley-Queissier theory owing to the presence of non-radiative recombination losses. In this Review, we analyse the predominant pathways that contribute to non-radiative recombination losses in perovskite solar cells, and evaluate their impact on device performance. We then discuss how non-radiative recombination losses can be estimated through reliable characterization techniques, and highlight some notable advances in mitigating these losses, which hint at pathways towards defect-free perovskite solar cells. Finally, we outline directions for future work that will push the efficiency of perovskite solar cells towards the radiative limit.

Minimizing non-radiative recombination losses in perovskite solar cells

Negative thermal expansion (NTE) is an intriguing physical property of solids, which is a consequence of a complex interplay among the lattice, phonons, and electrons. Interestingly, a large number of NTE materials have been found in various types of functional materials. In the last two decades good progress has been achieved to discover new phenomena and mechanisms of NTE. In the present review article, NTE is reviewed in functional materials of ferroelectrics, magnetics, multiferroics, superconductors, temperature-induced electron configuration change and so on. Zero thermal expansion (ZTE) of functional materials is emphasized due to the importance for practical applications. The NTE functional materials present a general physical picture to reveal a strong coupling role between physical properties and NTE. There is a general nature of NTE for both ferroelectrics and magnetics, in which NTE is determined by either ferroelectric order or magnetic one. In NTE functional materials, a multi-way to control thermal expansion can be established through the coupling roles of ferroelectricity-NTE, magnetism-NTE, change of electron configuration-NTE, open-framework-NTE, and so on. Chemical modification has been proved to be an effective method to control thermal expansion. Finally, challenges and questions are discussed for the development of NTE materials. There remains a challenge to discover a “perfect” NTE material for each specific application for chemists. The future studies on NTE functional materials will definitely promote the development of NTE materials.

Negative thermal expansion in functional materials: controllable thermal expansion by chemical modifications

Recent Progresses on Defect Passivation toward Efficient Perovskite Solar Cells

Metal-halide perovskites are rapidly emerging as an important class of photovoltaic absorbers that may enable high-performance solar cells at affordable cost. Thanks to the appealing optoelectronic properties of these materials, tremendous progress has been reported in the last few years in terms of power conversion efficiencies (PCE) of perovskite solar cells (PSCs), now with record values in excess of 24%. Nevertheless, the crystalline lattice of perovskites often includes defects, such as interstitials, vacancies, and impurities; at the grain boundaries and surfaces, dangling bonds can also be present, which all contribute to nonradiative recombination of photo-carriers. On device level, such recombination undesirably inflates the open-circuit voltage deficit, acting thus as a significant roadblock toward the theoretical efficiency limit of 30%. Herein, the focus is on the origin of the various voltage-limiting mechanisms in PSCs, and possible mitigation strategies are discussed. Contact passivation schemes and the effect of such methods on the reduction of hysteresis are described. Furthermore, several strategies that demonstrate how passivating contacts can increase the stability of PSCs are elucidated. Finally, the remaining key challenges in contact design are prioritized and an outlook on how passivating contacts will contribute to further the progress toward market readiness of high-efficiency PSCs is presented.

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Defect and Contact Passivation for Perovskite Solar Cells.

The B dopant stability and doping level tunability of ⟨112⟩ silicon nanowires (SiNWs) with alkene adsorption are revealed based on first-principles calculations. It is found that the alkenyl chains favor the middle location of (111) facet, and the B dopants prefer to locate at (110) facet of the ⟨112⟩ SiNW. Interestingly, the B doping levels are activated upon an alkene adsorption which introduces an intermediate energy level. This finding sheds light on how SiNWs can achieve effective doping.

Stabilizing and activating dopants in ⟨112⟩ silicon nanowires by alkene adsorptions: A first-principles study

Thermal and mechanical properties of novel substrate crystal Mg0.4Al2.4O4

The main challenge for interdigitated back-contact (IBC) solar cells is to reduce the fabrication complexity, which consists of multiple high-temperature processing and patterning steps. Patterned ion implantation has been proposed to simplify the manufacture of IBC solar cells, and the annealing of boron and phosphorus implanted areas is still a problem for the application. In this study, a new method consisting of laser annealing and a subsequent low-temperature oxidation (LA&OX) has been developed to co-anneal boron implanted p
 +
 and phosphorus implanted n
 +
 regions by a single step. We found that an additional laser annealing before oxidation could improve the electrical properties of boron-implanted p
 +
 regions effectively; however, it has almost no effect on the phosphorus-implanted n
 +
 regions. An industrially feasible IBC solar cell fabrication technology has been proposed based on the patterned ion implantation and LA&OX processing. The main fabrication steps of the IBC solar cell could be reduced to ten steps, and only one high-temperature oxidation step is required. As-designed IBC cell shows a potential efficiency higher than 23% according to simulations with the experimental parameters.

Ion-Implanted Laser-Annealed p + and n + Regions: A Potential Solution for Industrially Feasible High-Efficiency N-Type Interdigitated Back-Contact Solar Cells

In this work, alpha-Al2O3:C, a highly sensitive thermoluminescence dosimetry crystal, was grown by the EFG method in which a graphite heating unit and shield acted as the carbon source during the growth process. The optical, luminescent properties and dosimetric characteristics of the crystal were investigated. The as-grown crystal shows a single glow peak at 536 K, which is associated with Cr3+ ions. After annealing in H-2 at 1673 K for 80 h, the crystal shows a single glow peak at 460 K and a blue emission band at 415 nm. The thermoluminescent response of the annealed crystal shows linear-sublinear-saturation characteristics in the dose range from 5 x 10(-6) to 100 Gy.

Edge-Defined, Film-Fed Growth (EFG) Technique for the Preparation of α-Al2O3:C Crystal with Highly Sensitive Thermoluminescence Response

Laser doping of semiconductors has been the subject of intense research over the past decades. Previous work indicates that the use of SiO2/SiNx stacks instead of a single dielectric film as the anti-reflection coating and passivation layer results in laser doped lines with superior properties. In this paper, the impact of the SiNx layer thickness in the SiO2/SiNx stacks on the properties of laser doped lines is investigated through resistance measurements of the laser doped line and the silicon-metal contact and the doping profile near the edge of the dielectric window, the latter being an important factor in determining the likelihood of high recombination or even shunting from the subsequent metallization process. Fundamentally, a problem of exposed and undoped silicon near the dielectric window is identified for most of the investigated parameter range. However, optimization of the laser parameters and dielectric film conditions is shown to be capable of preventing or at least minimizing this problem. The results indicate that for the used laser system, samples with thick dielectric stack processed using a low pulse energy and pulse distance yield the most favorable properties, such as low line resistance and low contact resistivity. Under these conditions, the laser doped regions laterally extend underneath the dielectric films, thus reducing the likelihood of high surface recombination.

Xinbo Yang

Papers

Stabilizing and activating dopants in ⟨112⟩ silicon nanowires by alkene adsorptions: A first-principles study

Thermal and mechanical properties of novel substrate crystal Mg0.4Al2.4O4

Ion-Implanted Laser-Annealed p + and n + Regions: A Potential Solution for Industrially Feasible High-Efficiency N-Type Interdigitated Back-Contact Solar Cells

Edge-Defined, Film-Fed Growth (EFG) Technique for the Preparation of α-Al2O3:C Crystal with Highly Sensitive Thermoluminescence Response

The Impact of SiO $_{2}$ /SiN $_{\rm x}$ Stack Thickness on Laser Doping of Silicon Solar Cell