Y
Yang Zheng
Researcher at Pennsylvania State University
Publications - 7
Citations - 334
Yang Zheng is an academic researcher from Pennsylvania State University. The author has contributed to research in topics: Resistive random-access memory & Energy harvesting. The author has an hindex of 6, co-authored 7 publications receiving 284 citations.
Papers
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Proceedings ArticleDOI
Architecture exploration for ambient energy harvesting nonvolatile processors
Kaisheng Ma,Yang Zheng,Shuangchen Li,Karthik Swaminathan,Xueqing Li,Yongpan Liu,Jack Sampson,Yuan Xie,Vijaykrishnan Narayanan +8 more
TL;DR: The simulation platform in this paper is calibrated using measured results from a fabricated nonvolatile processor and used to explore the design space for a nonVolatile processor with different architectures, different input power sources, and policies for maximizing forward progress.
Journal ArticleDOI
Nonvolatile Processor Architectures: Efficient, Reliable Progress with Unstable Power
Kaisheng Ma,Xueqing Li,Karthik Swaminathan,Yang Zheng,Shuangchen Li,Yongpan Liu,Yuan Xie,Jack Sampson,Vijaykrishnan Narayanan +8 more
TL;DR: This article explores the design space for an NVP across different architectures, input power sources, and policies for maximizing forward progress in a framework calibrated using measured results from a fabricated NVP and proposes a heterogeneous microarchitecture solution that more efficiently capitalizes on ephemeral power surpluses.
Proceedings ArticleDOI
Architecting 3D vertical resistive memory for next-generation storage systems
TL;DR: An array-level model to estimate the read/write energy and characterize the vertical access transistor is developed and a multi-directional write driver is proposed to mitigate the writer circuitry overhead, and a remote sensing scheme to take full advantage of limited on-die sensing resources is proposed.
Journal ArticleDOI
Impact of Cell Failure on Reliable Cross-Point Resistive Memory Design
TL;DR: This article summarizes mechanisms of both soft and hard errors of ReRAM cells and proposes a unified model to characterize different failure behaviors, which can extend the lifetime of Re RAM up to 75% over a design without hard error detection and up to 12% over the design with a “write-verify” detection mechanism.
Proceedings ArticleDOI
Independently-Controlled-Gate FinFET 6T SRAM Cell Design for Leakage Current Reduction and Enhanced Read Access Speed
Kaisheng Ma,Huichu Liu,Yang Xiao,Yang Zheng,Xueqing Li,Sumeet Kumar Gupta,Yuan Xie,Vijaykrishnan Narayanan +7 more
TL;DR: Compared to previous 6T FinFET SRAMs, the proposed cells reduce the static leakage current, and enhance the write and read speed, and this structure is scalable for multi-ports.