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Yimin Xiong

Researcher at Chinese Academy of Sciences

Publications -  21
Citations -  469

Yimin Xiong is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Perovskite (structure) & Spintronics. The author has an hindex of 8, co-authored 21 publications receiving 248 citations. Previous affiliations of Yimin Xiong include University of Science and Technology of China.

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Anisotropic anomalous Hall effect in triangular itinerant ferromagnet Fe 3 GeTe 2

TL;DR: In this article, an anomalous Hall effect was observed in the triangular itinerant ferromagnet with the current along the $ab$ plane, which can be attributed to the chiral effect during the spin-flop process.
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Gate-Tuned Interlayer Coupling in van der Waals Ferromagnet Fe 3 GeTe 2 Nanoflakes

TL;DR: It is shown that a rarely seen zero-field cooled (ZFC) exchange bias with very large values has been observed when higher positive voltages are applied to the protonic gate, which clearly demonstrates that a strong interlayer coupling is realized by proton intercalation.
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Interfacial electronic structures revealed at the rubrene/CH3NH3PbI3 interface

TL;DR: In this paper, the electronic structures of rubrene films deposited on CH3NH3PbI3 perovskite have been investigated using in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photo-electron spectrumopy (XPS).
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Magnetic anisotropy and topological Hall effect in the trigonal chromium tellurides Cr 5 Te 8

TL;DR: In this article, the magnetic anisotropy and topological Hall effect in trigonal single crystals were investigated and the results showed that the spins are canted ferromagnetic aligned along $c$ axis with antiferromagnetic components in $ab$ plane.
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Enhanced Crystalline Phase Purity of CH3NH3PbI3-xClx Film for High-Efficiency Hysteresis-Free Perovskite Solar Cells.

TL;DR: The results indicate that the crystalline phase purity in CH3NH3PbI3-xClx perovskite film, especially in the surface region, plays a crucial role in determining the hysteresis effect and device performance.