Thank you very much for downloading design of analog cmos integrated circuits. Maybe you have knowledge that, people have look hundreds times for their favorite novels like this design of analog cmos integrated circuits, but end up in malicious downloads. Rather than reading a good book with a cup of coffee in the afternoon, instead they cope with some malicious virus inside their laptop. design of analog cmos integrated circuits is available in our book collection an online access to it is set as public so you can download it instantly. Our digital library saves in multiple countries, allowing you to get the most less latency time to download any of our books like this one. Merely said, the design of analog cmos integrated circuits is universally compatible with any devices to read.

Design Of Analog Cmos Integrated Circuits

This paper presents a low power boost converter for thermoelectric energy harvesting that demonstrates an efficiency that is 15% higher than the state-of-the-art for voltage conversion ratios above 20. This is achieved by utilizing a technique allowing synchronous rectification in the discontinuous conduction mode. A low-power method for input voltage monitoring is presented. The low input voltage requirements allow operation from a thermoelectric generator powered by body heat. The converter, fabricated in a 0.13 μm CMOS process, operates from input voltages ranging from 20 mV to 250 mV while supplying a regulated 1 V output. The converter consumes 1.6 (1.1) μW of quiescent power, delivers up to 25 (175) μW of output power, and is 46 (75)% efficient for a 20 mV and 100 mV input, respectively.

A 20 mV Input Boost Converter With Efficient Digital Control for Thermoelectric Energy Harvesting

The vision of embedding connectivity into billions of everyday objects runs into the reality of existing communication technologies -- there is no existing wireless technology that can provide reliable and long-range communication at tens of microwatts of power as well as cost less than a dime While backscatter is low-power and low-cost, it is known to be limited to short ranges This paper overturns this conventional wisdom about backscatter and presents the first wide-area backscatter system Our design can successfully backscatter from any location between an RF source and receiver, separated by 475 m, while being compatible with commodity LoRa hardware Further, when our backscatter device is co-located with the RF source, the receiver can be as far as 28 km away We deploy our system in a 4,800 ft2 (446 m2) house spread across three floors, a 13,024 ft2 (1210 m2) office area covering 41 rooms, as well as a one-acre (4046 m2) vegetable farm and show that we can achieve reliable coverage, using only a single RF source and receiver We also build a contact lens prototype as well as a flexible epidermal patch device attached to the human skin We show that these devices can reliably backscatter data across a 3,328 ft2 (309 m2) room Finally, we present a design sketch of a LoRa backscatter IC that shows that it costs less than a dime at scale and consumes only 925 mW of power, which is more than 1000x lower power than LoRa radio chipsets

https://dl.acm.org/doi/pdf/10.1145/3130970

LoRa Backscatter: Enabling The Vision of Ubiquitous Connectivity

Interleaving can relax the power-speed tradeoffs of analog-to-digital converters and reduce their metastability error rate while increasing the input capacitance. This paper quantifies the benefits and derives an upper bound on the performance by considering kT/C noise and slewing requirements of the circuit driving the system. A frequency-domain analysis of interleaved converters is also presented that sheds light on the corruption mechanisms due to interchannel mismatches. A background timing mismatch calibration technique is proposed and experimentally shown to reduce the image to -75 dB for input frequencies exceeding 500 MHz.

/pdf/design-considerations-for-interleaved-adcs-3nt0r0ms3k.pdf

Design Considerations for Interleaved ADCs

Herein, we demonstrate that a flexible, air-permeable, thermoelectric (TE) power generator can be prepared by applying a TE polymer (e.g. poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate)) coated commercial fabric and subsequently by linking the coated strips with a conductive connection (e.g. using fine metal wires). The poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) coated fabric shows very stable TE properties from 300 K to 390 K. The fabric device can generate a TE voltage output (V) of 4.3 mV at a temperature difference (ΔT) of 75.2 K. The potential for using fabric TE devices to harvest body temperature energy has been discussed. Fabric-based TE devices may be useful for the development of new power generating clothing and self-powered wearable electronics.

/pdf/thermoelectric-fabrics-toward-power-generating-clothing-yoo0j9uhut.pdf

Thermoelectric Fabrics: Toward Power Generating Clothing

An 11 b 800MS/S time-interleaved ADC is implemented in a 90nm CMOS process for a 10GBase-T application. A single open-loop T/H circuit using a cascode source follower achieves high resolution and conversion rate. The offset and gain mismatches are corrected by the digital background calibration. The measured DNL and INL are <0.5LSB and <1.6LSB, respectively. The measured SNDRs are 58 and 54dB for 15 and 400MHz inputs, respectively. The 1.4mm2 ADC consumes 350mW from a 1.3V supply (1.5V for T/H).

An 11b 800MS/s Time-Interleaved ADC with Digital Background Calibration

A low quiescent current asynchronous digital- LDO (D-LDO) regulator integrated with a phase-locked loop (PLL)-modulated switching regulator (SWR) that achieves the near-optimum power management supply for core processor in system-on-chip (SoC). The parallel connection of the asynchronous D-LDO regulator and the ripple-based control SWR can accomplish fast-DVS (F-DVS) operation as well as high power conversion efficiency. The asynchronous D-LDO regulator controlled by bidirectional asynchronous wave pipeline realizes the F-DVS operation, which guarantees high million instructions per second (MIPS) performance of the core processor under distinct tasks. The use of a ripple-based control SWR operating with a leading phase amplifier ensures fast response and stable operation without the need for large equivalent-series-resistance, thus reducing the output voltage ripple for the enhancement of supply quality. The fabricated chip occupies 1.04 mm2 in 40 nm CMOS technology. Experimental results show that a 94% peak efficiency with a voltage tracking speed of 7.5 V/μs as well as the improved MIPS performance by 5.6 times was achieved.

https://ir.nctu.edu.tw:443/bitstream/11536/21510/1/000316810500014.pdf

A Low Quiescent Current Asynchronous Digital-LDO With PLL-Modulated Fast-DVS Power Management in 40 nm SoC for MIPS Performance Improvement

The proposed power management module with a typical 1.2 V low-voltage PWM (LV-PWM) controller and dynamic voltage scaling (DVS) function is designed using 65 nm technology for integration with the ultra-wide band (UWB) system. The on-chip pre-regulator with a power conditioning circuit can provide a regulated supply voltage to the LV-controller. Moreover, the proposed handover technique can achieve the self-biasing mechanism to further reduce power dissipation. To operate in low voltage, the proposed compensation enhancement multistage amplifier (CEMA) can achieve high loop gain and ensure system stability without using any external compensation component. The fabricated power management module occupies 0.356 mm2 silicon area with an excellent line/load transient response. Owing to the DVS function, the proposed power management can meet the power requirement in the UWB system and other RF transceiver systems.

https://ir.nctu.edu.tw:443/bitstream/11536/15000/1/000298194200081.pdf

A DVS embedded power management for high efficiency integrated SOC in UWB system

A 2.4 GHz linear CMOS power amplifier (PA) for OFDM WLAN application in 65 nm CMOS technology is presented. The cascode PA operating from 3.3 V employs the proposed asymmetric lightly doped drain MOSFET (A-LDD) structure as common-gate stage to sustain large signal stress and 1.2 V core device as common source stage to provide high frequency operation. Beside, dynamic bias technique is used not only to increase efficiency but also improve the linearity. In the measurement, the breakdown voltage of the A-LDD MOSFET can achieve 6.2 V compared to standard I/O device of 5 V. A PA EVM of -29 dB is achieved at output power of 17 dBm with DC current of 173 mA from 3.3 V supply. Also, it reveals the output P1 dB of PA is 25.3 dBm.

A 2.4-GHz +25dBm P-1dB linear power amplifier with dynamic bias control in a 65-nm CMOS process

A single-inductor dual-output (SIDO) step-down DC-DC converter with continuous conduction mode (CCM) operation is proposed to achieve an area-efficient power management module. The low-voltage energy distribution controller (LV-EDC) can simultaneously guarantee good voltage regulation and low output voltage ripple. With the proposed dual-mode energy delivery methodology, cross regulation in steady-state output voltage ripple, which is rarely discussed, and cross regulation in load transient response are both effectively reduced. In addition, the energy mode transition operation helps obtain the appropriate energy operation mode using the energy delivery paths for dual outputs. Moreover, within the allowable output voltage ripple, the automatic energy bypass (AEB) mechanism can reduce the number of energy delivery paths, thereby ensuring voltage regulation and further enhancing efficiency. The test chip, fabricated in 55-nm CMOS, occupies 1.44 mm2 and achieves 91% peak efficiency, low output voltage ripple, and excellent load transient response for a high-efficiency system-on-a-chip (SoC) integration.

https://ir.nctu.edu.tw:443/bitstream/11536/14681/1/000296234100006.pdf

Ying-Hsi Lin

Papers

An 11b 800MS/s Time-Interleaved ADC with Digital Background Calibration

A Low Quiescent Current Asynchronous Digital-LDO With PLL-Modulated Fast-DVS Power Management in 40 nm SoC for MIPS Performance Improvement

A DVS embedded power management for high efficiency integrated SOC in UWB system

A 2.4-GHz +25dBm P-1dB linear power amplifier with dynamic bias control in a 65-nm CMOS process

Minimized Transient and Steady-State Cross Regulation in 55-nm CMOS Single-Inductor Dual-Output (SIDO) Step-Down DC-DC Converter