https://www.cs.montana.edu/courses/csci566/Ref/CR-Survey.pdf

NeXt generation/dynamic spectrum access/cognitive radio wireless networks: a survey

The CMOS technology area has quickly grown, calling for a new text--and here it is, covering the analysis and design of CMOS integrated circuits that practicing engineers need to master to succeed. Filled with many examples and chapter-ending problems, the book not only describes the thought process behind each circuit topology, but also considers the rationale behind each modification. The analysis and design techniques focus on CMOS circuits but also apply to other IC technologies.
Table of contents

1 Introduction to Analog Design
2 Basic MOS Device Physics
3 Single-Stage Amplifiers
4 Differential Amplifiers
5 Passive and Active Current Mirrors
6 Frequency Response of Amplifiers
7 Noise
8 Feedback
9 Operational Amplifiers
10 Stability and Frequency Compensation
11 Bandgap References
12 Introduction to Switched-Capacitor Circuits
13 Nonlinearity and Mismatch
14 Oscillators
15 Phase-Locked Loops
16 Short-Channel Effects and Device Models
17 CMOS Processing Technology
18 Layout and Packaging

/pdf/design-of-analog-cmos-integrated-circuits-35wxhwa3a6.pdf

Design of Analog CMOS Integrated Circuits

W ireless integrated network sensors (WINS) provide distributed network and Internet access to sensors, controls, and processors deeply embedded in equipment, facilities, and the environment. The WINS network represents a new monitoring and control capability for applications in such industries as transportation, manufacturing, health care, environmental oversight, and safety and security. WINS combine microsensor technology and low-power signal processing, computation, and low-cost wireless networking in a compact system. Recent advances in integrated circuit technology have enabled construction of far more capable yet inexpensive sensors, radios, and processors, allowing mass production of sophisticated systems linking the physical world to digital data networks [2–5]. Scales range from local to global for applications in medicine, security, factory automation, environmental monitoring, and condition-based maintenance. Compact geometry and low cost allow WINS to be embedded and distributed at a fraction of the cost of conventional wireline sensor and actuator systems. WINS opportunities depend on development of a scalable, low-cost, sensor-network architecture. Such applications require delivery of sensor information to the user at a low bit rate through low-power transceivers. Continuous sensor signal processing enables the constant monitoring of events in an environment in which short message packets would suffice. Future applications of distributed embedded processors and sensors will require vast numbers of devices. Conventional methods of sensor networking represent an impractical demand on cable installation and network bandwidth. Processing at the source would drastically reduce the financial, computational, and management burden on communication system

Wireless integrated network sensors

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

/pdf/fundamentals-of-modern-vlsi-devices-471xd7l9pf.pdf

Fundamentals of Modern VLSI Devices

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

/pdf/science-and-technology-roadmap-for-graphene-related-two-4q9m7czlkc.pdf

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

RF Microelectronics

This paper describes the issues and tradeoffs in the design and monolithic implementation of direct-conversion receivers and proposes circuit techniques that can alleviate the drawbacks of this architecture. Following a brief study of heterodyne and image-reject topologies, the direct-conversion architecture is introduced and effects such as dc offset, I/Q mismatch, even-order distortion, flicker noise, and oscillator leakage are analyzed. Related design techniques for amplification and mixing, quadrature phase calibration, and baseband processing are also described.

/pdf/design-considerations-for-direct-conversion-receivers-mhrbpb7onw.pdf

Design considerations for direct-conversion receivers

Injection locking characteristics of oscillators are derived and a graphical analysis is presented that describes injection pulling in time and frequency domains. An identity obtained from phase and envelope equations is used to express the requisite oscillator nonlinearity and interpret phase noise reduction. The behavior of phase-locked oscillators under injection pulling is also formulated.

/pdf/a-study-of-injection-locking-and-pulling-in-oscillators-43lsvme4nh.pdf

A study of injection locking and pulling in oscillators

This paper presents a study of phase noise in two inductorless CMOS oscillators. First-order analysis of a linear oscillatory system leads to a noise shaping function and a new definition of Q. A linear model of CMOS ring oscillators is used to calculate their phase noise, and three phase noise phenomena, namely, additive noise, high-frequency multiplicative noise, and low-frequency multiplicative noise, are identified and formulated. Based on the same concepts, a CMOS relaxation oscillator is also analyzed. Issues and techniques related to simulation of noise in the time domain are described, and two prototypes fabricated in a 0.5-/spl mu/m CMOS technology are used to investigate the accuracy of the theoretical predictions. Compared with the measured results, the calculated phase noise values of a 2-GHz ring oscillator and a 900-MHz relaxation oscillator at 5 MHz offset have an error of approximately 4 dB.

/pdf/a-study-of-phase-noise-in-cmos-oscillators-4d0230fem5.pdf

Behzad Razavi

Papers

Design of Analog CMOS Integrated Circuits

RF Microelectronics

Design considerations for direct-conversion receivers

A study of injection locking and pulling in oscillators

A study of phase noise in CMOS oscillators