Y
Ying Wang
Researcher at China Jiliang University
Publications - 21
Citations - 254
Ying Wang is an academic researcher from China Jiliang University. The author has contributed to research in topics: Photodetector & Quantum efficiency. The author has an hindex of 8, co-authored 21 publications receiving 179 citations.
Papers
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Journal ArticleDOI
Ultrasensitive flexible broadband photodetectors achieving pA scale dark current
Xiao Luo,Xiao Luo,Feiyu Zhao,Lili Du,Lili Du,Wenli Lv,Kun Xu,Yingquan Peng,Ying Wang,Feiping Lu +9 more
TL;DR: Li et al. as mentioned in this paper developed an organic-inorganic hybrid photodetector that outperforms conventional inorganic like Si and InGaAs-based photodetsors in at least two aspects: broader detection spectral range and much lower dark current.
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High performance photodiode based on MoS2/pentacene heterojunction
Yingquan Peng,Yingquan Peng,Rongzheng Ding,Qiang Ren,Sunan Xu,Sunan Xu,Lei Sun,Ying Wang,Feiping Lu +8 more
TL;DR: In this paper, a monomolecular layer MoS2/pentacene heterojunction was fabricated and characterized, and the photoresponsivity, external quantum efficiency (EQE), and specific detectivity (D∗) were achieved.
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Ultrasensitivity broadband photodetectors based on perovskite: Research on film crystallization and electrode optimization
Feiyu Zhao,Kun Xu,Xiao Luo,Wenli Lv,Yingquan Peng,Yingquan Peng,Ying Wang,Feiping Lu,Sunnan Xu +8 more
TL;DR: In this article, a broad spectral photodetector based on CH3NH3PbI3−xClx was presented, which has been optimized with four different electrodes and a specially modified highly crystallized active layer.
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Insight into trap state dynamics for exploiting current multiplication in organic photodetectors
TL;DR: In this article, an ultrathin fullerene (C-60) film was used as a hole trap or barrier layer to demonstrate current multiplication by engineering an ultra-thin film as hole trap.
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Charge-transport interfacial modification enhanced ultraviolet (UV)/near-UV phototransistor with high sensitivity and fast response speed
Xiao Luo,Lili Du,Wenli Lv,Lei Sun,Yao Li,Yingquan Peng,Yingquan Peng,Feiyu Zhao,Jianping Zhang,Tang Ying,Ying Wang +10 more
TL;DR: Fullerene (C 60 ) phototransistors were fabricated on Si/SiO 2 wafer modified by polyvinyl alcohol/octadecyltrichlorosilane, and their light-induced electric properties were investigated in detail.