L
Lili Du
Researcher at Lanzhou University
Publications - 14
Citations - 248
Lili Du is an academic researcher from Lanzhou University. The author has contributed to research in topics: Quantum efficiency & Field-effect transistor. The author has an hindex of 10, co-authored 14 publications receiving 197 citations. Previous affiliations of Lili Du include China Jiliang University.
Papers
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Journal ArticleDOI
Toward facile broadband high photoresponse of fullerene based phototransistor from the ultraviolet to the near-infrared region
Lili Du,Xiao Luo,Feiyu Zhao,Wenli Lv,Jianping Zhang,Yingquan Peng,Yingquan Peng,Tang Ying,Ying Wang +8 more
TL;DR: In this article, the authors report high-performance broadband photodetection devices fabricated using an all-organic heterojunction of fullerene/chloroaluminum phthalocyanine with a high-efficiency exciton-dissociation interface and complementary spectral absorption.
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Ultrasensitive flexible broadband photodetectors achieving pA scale dark current
Xiao Luo,Xiao Luo,Feiyu Zhao,Lili Du,Lili Du,Wenli Lv,Kun Xu,Yingquan Peng,Ying Wang,Feiping Lu +9 more
TL;DR: Li et al. as mentioned in this paper developed an organic-inorganic hybrid photodetector that outperforms conventional inorganic like Si and InGaAs-based photodetsors in at least two aspects: broader detection spectral range and much lower dark current.
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Insight into trap state dynamics for exploiting current multiplication in organic photodetectors
TL;DR: In this article, an ultrathin fullerene (C-60) film was used as a hole trap or barrier layer to demonstrate current multiplication by engineering an ultra-thin film as hole trap.
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Charge-transport interfacial modification enhanced ultraviolet (UV)/near-UV phototransistor with high sensitivity and fast response speed
Xiao Luo,Lili Du,Wenli Lv,Lei Sun,Yao Li,Yingquan Peng,Yingquan Peng,Feiyu Zhao,Jianping Zhang,Tang Ying,Ying Wang +10 more
TL;DR: Fullerene (C 60 ) phototransistors were fabricated on Si/SiO 2 wafer modified by polyvinyl alcohol/octadecyltrichlorosilane, and their light-induced electric properties were investigated in detail.
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High-performance organic broadband photomemory transistors exhibiting remarkable UV-NIR response
TL;DR: This study presents a universal strategy to fabricate organic broadband photomemories featuring remarkable UV-NIR response, thereby providing optical switching ability with a controllable memory window and demonstrates an excellent performance with the broadest response spectra and the highest photomemsory efficiency.