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Electronic Transport In Mesoscopic Systems

Hexagonal boron nitride (h-BN) and semiconducting transition metal dichalcogenides (TMDs) promise greatly improved electrostatic control in future scaled electronic devices. To quantify the prospects of these materials in devices, we calculate the out-of-plane and in-plane dielectric constant from first principles for TMDs in trigonal prismatic and octahedral coordination, as well as for h-BN, with a thickness ranging from monolayer and bilayer to bulk. Both the ionic and electronic contribution to the dielectric response are computed. Our calculations show that the out-of-plane dielectric response for the transition-metal dichalcogenides is dominated by its electronic component and that the dielectric constant increases with increasing chalcogen atomic number. Overall, the out-of-plane dielectric constant of the TMDs and h-BN increases by less than 15% as the number of layers is increased from monolayer to bulk, while the in-plane component remains unchanged. Our computations also reveal that for octahedrally coordinated TMDs the ionic (static) contribution to the dielectric response is very high (4.5 times the electronic contribution) in the in-plane direction. This indicates that semiconducting TMDs in the tetragonal phase will suffer from excessive polar-optical scattering thereby deteriorating their electronic transport properties. The out-of-plane dielectric constant of transition metal dichalcogenides and h-BN is thickness-dependent, unlike their in-plane counterpart. A team led by William Vandenberghe at the University of Texas at Dallas performed calculations of the optical and static relative permittivity of free-standing monolayer, bilayer, and bulk transition metal dichalcogenides, in the in-plane and out-of-plane directions. In h-BN, the in-plane contribution was found to be larger than its out-of-plane counterpart, and independent on the number of h-BN layers. Conversely, the out-of-plane h-BN dielectric constant showed an increase when going from monolayer to bulk. In transition metal dichalcogenides, the dielectric constant components displayed similar trends to those observed in h-BN with regards to their thickness evolution. The calculations also indicated that the electronic component dominates the overall dielectric response for most of the analyzed 2D materials.

/pdf/dielectric-properties-of-hexagonal-boron-nitride-and-1cl7bl8w97.pdf

Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk

https://cyberleninka.org/article/n/1380904.pdf

ASAP7: A 7-nm finFET predictive process design kit

Rhenium disulfide (ReS2) is a two-dimensional (2D) group VII transition metal dichalcogenide (TMD). It is attributed with structural and vibrational anisotropy, layer-independent electrical and optical properties, and metal-free magnetism properties. These properties are unusual compared with more widely used group VI-TMDs, e.g., MoS2, MoSe2, WS2 and WSe2. Consequently, it has attracted significant interest in recent years and is now being used for a variety of applications including solid state electronics, catalysis, and, energy harvesting and energy storage. It is anticipated that ReS2 has the potential to be equally used in parallel with isotropic TMDs from group VI for all known applications and beyond. Therefore, a review on ReS2 is very timely. In this first review on ReS2, we critically analyze the available synthesis procedures and their pros/cons, atomic structure and lattice symmetry, crystal structure, and growth mechanisms with an insight into the orientation and architecture of domain and grain boundaries, decoupling of structural and vibrational properties, anisotropic electrical, optical, and magnetic properties impacted by crystal imperfections, doping and adatoms adsorptions, and contemporary applications in different areas.

/pdf/advent-of-2d-rhenium-disulfide-res2-fundamentals-to-1nt3dgwkl7.pdf

Advent of 2D Rhenium Disulfide (ReS2): Fundamentals to Applications

A micromagnetic simulation study has been performed to analyze the magnetization switching dynamics of a ferromagnet on a topological insulator surface. The micromagnetic simulation is based on an analytical solution obtained for the spin-orbit torque which is position-dependent due to current shunting in the bilayer. The micromagnetic simulation is carried out using Ubermag, which is a python-language-based interface and uses OOMMF as the computational backend. From the simulations, switching times are extracted for the position-dependent case as well as various limiting cases. It is found that the switching time for the position-dependent case approaches the parallel transport limit for large values of the normalized tunneling rate and large length of the device, and the spin-orbit torque efficiency can be greater than 1 in those cases.

Micromagnetic Simulations of Magnetization Dynamics Due to Position-dependent Spin-Orbit Torque From Topological Insulator

Convolutional neural networks (CNNs) have become the state-of-the-art tool for image classification, object detection, and segmentation. The max-pooling layer in the CNN architecture leads to a significant enhancement in the classification accuracy by extracting the most prominent features from the feature maps produced by the convolutional layers, reducing the number of computations, and preventing overfitting. However, the conventional digital/analog implementations of the max-pooling layer are energy-hungry. Moreover, compact and energy-efficient hardware implementation of the max-pooling layer is essential for realizing CNNs which may handle complex artificial intelligence (AI)/machine learning (ML) workloads on Internet of Things (IoT) edge devices. To this end, in this work, for the first time, we have proposed a highly scalable, compact, and energy-efficient implementation of the max-pooling algorithm utilizing a single Ferroelectric (Fe)-FinFET. We have designed a novel feature-to-pulse mapping scheme and exploit the history-effect in the polarization state of Fe-FinFETs (which is otherwise undesirable for memory application). Our comprehensive analysis using an experimentally calibrated compact model for the doped-HfO2 ferroelectric capacitor integrated with 14-nm-FinFET technology indicates that the final polarization state of the Fe-FinFET corresponds to the maximum input feature irrespective of the order of application of inputs with a mean relative error of 4.95% while consuming 22.8 fJ of energy. Furthermore, extensive network simulations show that such a small deviation of the max-pooling layer output from the ideal value does not lead to a significant degradation in the classification accuracy ( $< 2$ % drop in network fidelity).

Efficient Implementation of Max-Pooling Algorithm Exploiting History-Effect in Ferroelectric-FinFETs

Field-Effect Transistors Based on Two-dimensional Materials (Invited)

A quantum mechanical model of charge centroid is presented for III-V FETs. The model takes into account the finite potential barrier at the semiconductor/insulator interface and also the non-linearity of the potential profile. The model takes two energy subbands into account to calculate the centroid shift and has been validated against TCAD simulations.

Accurate modeling of centroid shift in III-V FETs including non-linear potential profile and wave-function penetration

The subthreshold leakage current in transistors has become a critical limiting factor for realizing ultralow-power transistors. The leakage current is predominantly dictated by the long thermal tail of the charge carriers. We propose a solution to this problem by using narrow-bandwidth semiconductors to limit the thermionic leakage current by filtering out the high-energy carriers. We specifically demonstrate this solution in transistors with a laterally confined ${\text{MoSi}}_{2}{\text{N}}_{4}$ monolayer with different passivation serving as channel material. Remarkably, we find that the proposed narrow-bandwidth devices can achieve a large on:off current ratio with an ultralow-power supply voltage of $\ensuremath{\sim}0.1\phantom{\rule{0.2em}{0ex}}\text{V}$, even for devices with $\ensuremath{\sim}5\phantom{\rule{0.2em}{0ex}}\mathrm{nm}$ gate length. We also show that several other materials share the unique electronic properties of narrow-bandwidth conduction and valence bands in the same series. 

Designing Power-Efficient Transistors Using Narrow-Bandwidth Materials from the 
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Yogesh Singh Chauhan

Papers

Micromagnetic Simulations of Magnetization Dynamics Due to Position-dependent Spin-Orbit Torque From Topological Insulator

Efficient Implementation of Max-Pooling Algorithm Exploiting History-Effect in Ferroelectric-FinFETs

Field-Effect Transistors Based on Two-dimensional Materials (Invited)

Accurate modeling of centroid shift in III-V FETs including non-linear potential profile and wave-function penetration

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