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Electronic Transport In Mesoscopic Systems

Hexagonal boron nitride (h-BN) and semiconducting transition metal dichalcogenides (TMDs) promise greatly improved electrostatic control in future scaled electronic devices. To quantify the prospects of these materials in devices, we calculate the out-of-plane and in-plane dielectric constant from first principles for TMDs in trigonal prismatic and octahedral coordination, as well as for h-BN, with a thickness ranging from monolayer and bilayer to bulk. Both the ionic and electronic contribution to the dielectric response are computed. Our calculations show that the out-of-plane dielectric response for the transition-metal dichalcogenides is dominated by its electronic component and that the dielectric constant increases with increasing chalcogen atomic number. Overall, the out-of-plane dielectric constant of the TMDs and h-BN increases by less than 15% as the number of layers is increased from monolayer to bulk, while the in-plane component remains unchanged. Our computations also reveal that for octahedrally coordinated TMDs the ionic (static) contribution to the dielectric response is very high (4.5 times the electronic contribution) in the in-plane direction. This indicates that semiconducting TMDs in the tetragonal phase will suffer from excessive polar-optical scattering thereby deteriorating their electronic transport properties. The out-of-plane dielectric constant of transition metal dichalcogenides and h-BN is thickness-dependent, unlike their in-plane counterpart. A team led by William Vandenberghe at the University of Texas at Dallas performed calculations of the optical and static relative permittivity of free-standing monolayer, bilayer, and bulk transition metal dichalcogenides, in the in-plane and out-of-plane directions. In h-BN, the in-plane contribution was found to be larger than its out-of-plane counterpart, and independent on the number of h-BN layers. Conversely, the out-of-plane h-BN dielectric constant showed an increase when going from monolayer to bulk. In transition metal dichalcogenides, the dielectric constant components displayed similar trends to those observed in h-BN with regards to their thickness evolution. The calculations also indicated that the electronic component dominates the overall dielectric response for most of the analyzed 2D materials.

/pdf/dielectric-properties-of-hexagonal-boron-nitride-and-1cl7bl8w97.pdf

Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk

https://cyberleninka.org/article/n/1380904.pdf

ASAP7: A 7-nm finFET predictive process design kit

Rhenium disulfide (ReS2) is a two-dimensional (2D) group VII transition metal dichalcogenide (TMD). It is attributed with structural and vibrational anisotropy, layer-independent electrical and optical properties, and metal-free magnetism properties. These properties are unusual compared with more widely used group VI-TMDs, e.g., MoS2, MoSe2, WS2 and WSe2. Consequently, it has attracted significant interest in recent years and is now being used for a variety of applications including solid state electronics, catalysis, and, energy harvesting and energy storage. It is anticipated that ReS2 has the potential to be equally used in parallel with isotropic TMDs from group VI for all known applications and beyond. Therefore, a review on ReS2 is very timely. In this first review on ReS2, we critically analyze the available synthesis procedures and their pros/cons, atomic structure and lattice symmetry, crystal structure, and growth mechanisms with an insight into the orientation and architecture of domain and grain boundaries, decoupling of structural and vibrational properties, anisotropic electrical, optical, and magnetic properties impacted by crystal imperfections, doping and adatoms adsorptions, and contemporary applications in different areas.

/pdf/advent-of-2d-rhenium-disulfide-res2-fundamentals-to-1nt3dgwkl7.pdf

Advent of 2D Rhenium Disulfide (ReS2): Fundamentals to Applications

In this paper, flicker noise behavior of lateral non-uniformly doped MOSFET is studied using impedance field method. Our study shows that Klaassen Prins (KP) method, which forms the basis of noise model in MOSFETs, underestimates flicker noise in such devices. The same KP method overestimates thermal noise by 2–3 orders of magnitude in similar devices as demonstrated in Roy et al. (2007). This apparent discrepancy between thermal and flicker noise behavior lies in origin of these noises, which leads to opposite trend of local noise power spectral density vs doping. We have modeled the physics behind such behavior, which also explain the trends observed in the measurements (Agarwal et al., 2015).

Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs

We present a new multi-domain model for polarization switching in ferroelectric materials. The computationally efficient model captures the time evolution of multi-domain ferroelectrics with good accuracy along with the frequency dependent switching behavior. We have fabricated (PVDF) and measured P-E characteristics of PZT and PVDF capacitors and have validated the model with measurements. The model allows the visualization of time dependent domain switching allowing further physical insights. We have also proposed a method to extract the distribution of domain orientations experimentally.

Modeling of Multi-domain Switching in Ferroelectric Materials: Application to Negative Capacitance FETs

In this work, we present the recent and upcoming enhancements of the industry standard BSIM-BULK (formerly BSIM6) model. BSIM-BULK is the latest body referenced compact model for bulk MOSFETs having a unified core, which is developed by the BSIM group for accurate design of analog and RF circuits. The model satisfies the symmetry test for DC and AC, correctly predicts harmonic slope, and exhibits accurate results for RF and analog simulations. In order to further improve the model accuracy for transconductance $(g_{m})$ and output conductance $(g_{ds})$, an analytical model for bulk charge effect, in both current and capacitance, is implemented. Several other advanced models are added to capture real device physics. These include: parasitic current at the shallow trench isolation edges; leakage current components in zero threshold voltage native devices; new model for NQS to capture the NQS effects up to the millimeter wave regime; self heating effect; and heavily halo implanted MOSFET’s anomalous g m , flicker noise and I DS mismatch. All these enhancements have been implemented to high standards of computational efficiency and robustness.

BSIM-BULK: Accurate Compact Model for Analog and RF Circuit Design

We have already presented a compact model for FETs operating in the quasi-ballistic regime [1]  However, this model suffers from two important problems: 1) the profile for charge density along the channel is not correctly accounted for and 2) current is not conserved throughout the channel In this brief, we propose improvement, which does away with these inaccuracies

An Improved Model for Quasi-Ballistic Transport in MOSFETs

In this work, we study the trapping in GaN power HEMTs and discuss effect of traps on device characteristics. Simulation setups for analysis of switching collapse and current collapse observed in pulsed I–V are also presented. We propose an RC network based trap model to capture the effect of trapping in a surface potential based compact model for GaN HEMTs. The proposed model has been verified with the hardware data for various quiescent biases and frequencies, and the model results are in excellent agreement with the hardware data.

Yogesh Singh Chauhan

Papers

Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs

Modeling of Multi-domain Switching in Ferroelectric Materials: Application to Negative Capacitance FETs

BSIM-BULK: Accurate Compact Model for Analog and RF Circuit Design

An Improved Model for Quasi-Ballistic Transport in MOSFETs

Modeling of trapping effects in GaN HEMTs