Y
Yogesh Singh Chauhan
Researcher at Indian Institute of Technology Kanpur
Publications - 328
Citations - 4763
Yogesh Singh Chauhan is an academic researcher from Indian Institute of Technology Kanpur. The author has contributed to research in topics: Transistor & MOSFET. The author has an hindex of 30, co-authored 265 publications receiving 3355 citations. Previous affiliations of Yogesh Singh Chauhan include École Normale Supérieure & Indian Institutes of Technology.
Papers
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Proceedings ArticleDOI
Analysis and modeling of capacitances in halo-implanted MOSFETs
TL;DR: In this article, the anomalous behavior of capacitances in halo channel MOSFETs for the linear and saturation regions was reported, and a computationally efficient SPICE model was used to model these trends which shows excellent matching with the measured and TCAD data.
Proceedings ArticleDOI
Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model
Harshit Agarwal,Pragya Kushwaha,Yogesh Singh Chauhan,Sourabh Khandelwal,Juan P. Duarte,Yen-Kai Lin,Huan-Lin Chang,Chenming Hu,Heng Wu,Peide D. Ye +9 more
TL;DR: In this article, a compact model for independent double gate MOSFET (BSIM-IMG) with updated mobility model is presented for Germanium On Insulator (GeOI) devices.
Journal ArticleDOI
A Channel Stress-Profile-Based Compact Model for Threshold Voltage Prediction of Uniaxial Strained HKMG nMOS Transistors
TL;DR: In this paper, a physics-based compact model for the longitudinal and transverse stress profile in the channel of an uniaxially strained bulk MOS transistor is presented, which accurately predicts the average channel stress for different stress liners and transistor dimensions like gate length, gate height, and spacer width.
Proceedings ArticleDOI
Non-Linear RF Modeling of GaN HEMTs with Industry Standard ASM GaN Model (Invited)
TL;DR: This paper presents nonlinear radiofrequency modeling of Gallium Nitride based high electron mobility transistors (GaN HEMTs) using recently selected industry standard surface-potential-based Advance SPICE Model (ASM) for GaN HemTs and describes the key features of ASM GaN model from user perspective.
Comprehensive Variability Analysis in Dual-Port FeFET for Reliable Multi-Level-Cell Storage
TL;DR: In this article , the variability of the intermediate threshold voltage of asymmetric double-gate FeFET with dual port boast of a large memory window when read from the back gate (BG), compared with the front gate (FG).