Y
Yogesh Singh Chauhan
Researcher at Indian Institute of Technology Kanpur
Publications - 328
Citations - 4763
Yogesh Singh Chauhan is an academic researcher from Indian Institute of Technology Kanpur. The author has contributed to research in topics: Transistor & MOSFET. The author has an hindex of 30, co-authored 265 publications receiving 3355 citations. Previous affiliations of Yogesh Singh Chauhan include École Normale Supérieure & Indian Institutes of Technology.
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Proceedings ArticleDOI
Surface-Potential-Based RF Large Signal Model for Gallium Nitride HEMTs
TL;DR: In this paper, a physics-based large signal RF compact model for Gallium Nitride HEMTs (GaNHEMTs) is presented, which is called Advance SPICE Model for GaN HEMT or ASM-GaN-HEMT model.
Proceedings ArticleDOI
Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs
Yogesh Singh Chauhan,Francois Krummenacher,Costin Anghel,Renaud Gillon,Benoit Bakeroot,Michel Declercq,Adrian M. Ionescu +6 more
TL;DR: In this article, the impact and modeling of lateral doping gradient present in the intrinsic MOS channel of high voltage MOSFETs eg VDMOS and LDMOS is reported.
Journal ArticleDOI
Unveiling the Impact of IR-Drop on Performance Gain in NCFET-Based Processors
TL;DR: In this paper, the impact of negative capacitance field effect transistor (NCFET) on the performance of processors has been investigated, from physics all the way to full-chip (GDSII) level, under the impact that NC has on magnifying and compensating IR-drop.
Proceedings ArticleDOI
Designing energy efficient and hysteresis free negative capacitance FinFET with negative DIBL and 3.5X I ON using compact modeling approach
TL;DR: In this paper, a physics-based model for negative capacitance (NC) FinFETs by coupling the Landau-Khalatnikov model of ferroelctric materials with the standard BSIM-CMG model was developed.
Journal ArticleDOI
Quantum Confinement Effects in Extremely Thin Body Germanium n-MOSFETs
TL;DR: In this paper, the impact of varying channel thickness (from 8 to 1.5 nm) on extremely thin germanium n-MOSFETs, by explicitly incorporating the quantum confinement effects in the band structure calculations using the first principle density functional theory, was explored.