Yongguang Xiao

TL;DR: In this article, a surface-potential-based model for the symmetric long-channel junctionless double-gate MOSFET was developed, where the relationship between surface potential and gate voltage were derived from some effective approximations to Poisson's equation for deep depletion, partial depletion, and accumulation conditions.

TL;DR: In this paper, the authors showed that the external compliance current is a key factor in resistance switching phenomenon of SrTiO3 (STO) thin films, and they found that the BRS behavior may be controlled by the structure interface while the URS behavior is likely bulk controlled.

TL;DR: In this article, the effects of an amorphous ZrO2 layer on the TiO2-based bipolar resistive switching memory device were investigated and a remarkably improved uniformity of switching parameters such as switching voltages and resistances in high/low states was demonstrated.

TL;DR: Based on the crystal structure prediction method and first-principles calculations, Wang et al. as discussed by the authors obtained two new 2D molybdenum boride structures of tetr- and tri-Mo2B2.

TL;DR: In this paper, the coexistence of bipolar resistive switching (BRS) and unipolar resistive switch (URS) modes in Pt/Zn0.99Zr0.01O/Pt structure devices was investigated.