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Yongjing Lin

Researcher at University of California, Berkeley

Publications -  33
Citations -  4686

Yongjing Lin is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Water splitting & Atomic layer deposition. The author has an hindex of 28, co-authored 32 publications receiving 4194 citations. Previous affiliations of Yongjing Lin include Lawrence Berkeley National Laboratory & University of Science and Technology of China.

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Nanonet-Based Hematite Heteronanostructures for Efficient Solar Water Splitting

TL;DR: The design introduces material components to provide a dedicated charge-transport pathway, alleviating the reliance on the materials' intrinsic properties, and therefore has the potential to greatly broaden where and how various existing materials can be used in energy-related applications.
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Enabling unassisted solar water splitting by iron oxide and silicon.

TL;DR: It is shown that, by using the prototypical photoanode material of haematite as a study tool, structural disorders on or near the surfaces are important causes of the low photovoltages.
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Hematite-based solar water splitting: challenges and opportunities

TL;DR: In this article, a general strategy of forming heteronanostructures to help meet the charge transport challenge was introduced within the context of two material platforms, webbed nanonets and vertically aligned transparent conductive nanotubes.
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Growth of p-type hematite by atomic layer deposition and its utilization for improved solar water splitting.

TL;DR: The p-type layer was found to create a built-in field that could be used to assist photoelectrochemical water splitting reactions, suggesting that it is possible to achieve desired energetics for solar water splitting directly on metal oxides through advanced material preparations.
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Water Splitting by Tungsten Oxide Prepared by Atomic Layer Deposition and Decorated with an Oxygen‐Evolving Catalyst

TL;DR: It is shown that crystalline WO3 can be synthesized by the atomic layer deposition (ALD) method in the true ALD regime, and that a long H2O pulse time is necessary to initiate growth is a key finding of this work.