D
Dunwei Wang
Researcher at Boston College
Publications - 192
Citations - 18515
Dunwei Wang is an academic researcher from Boston College. The author has contributed to research in topics: Catalysis & Chemistry. The author has an hindex of 61, co-authored 174 publications receiving 16343 citations. Previous affiliations of Dunwei Wang include Stanford University & California Institute of Technology.
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Noncovalent Sidewall Functionalization of Single-Walled Carbon Nanotubes for Protein Immobilization
TL;DR: Single-walled carbon nanotubes are molecular wires that exhibit interesting structural, mechanical, electrical, and electromechanical properties that make for an ideal miniaturized sensor.
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Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors
TL;DR: This work presents a scalable and parallel process for transferring hundreds of pre-aligned silicon nanowires onto plastic to yield highly ordered films for low-power sensor chips, and uses SiO2 surface chemistries to construct a 'nano-electronic nose' library.
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Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics
Ali Javey,Jing Guo,Damon B. Farmer,Qian Wang,Dunwei Wang,Roy G. Gordon,Mark Lundstrom,Hongjie Dai +7 more
TL;DR: In this article, the authors proposed an enhancement-mode semiconducting carbon nanotube field effect transistors (CNTFETs) that combines ohmic metal-tube contacts, highdielectric-constant HfO2 films as gate insulators, and electrostatically doped nanotubes segments as source/drain electrodes.
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Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method
Yiming Li,David Mann,Marco Rolandi,Woong Kim,Ant Ural,Steven Hung,Ali Javey,Jien Cao,Dunwei Wang,Erhan Yenilmez,Qian Wang,James F. Gibbons,Yoshio Nishi,Hongjie Dai +13 more
TL;DR: In this paper, single-walled carbon nanotubes (SWNTs) are grown by a plasma enhanced chemical vapor deposition (PECVD) method at 600 °C.
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Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics
Dunwei Wang,Qian Wang,Ali Javey,Ryan Tu,Hongjie Dai,Hyoungsub Kim,Paul C. McIntyre,Tejas Krishnamohan,Krishna C. Saraswat +8 more
TL;DR: In this article, single-crystal Ge nanowires are synthesized by a low-temperature (275°C) chemical vapor deposition (CVD) method, and Boron doped p-type GeNW field effect transistors (FETs) with back-gates and thin SiO2 (10 nm) gate insulators are constructed.