An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Micro- and nano-sensors lie at the heart of critical innovation in fields ranging from medical to environmental sciences. In recent years, there has been a significant improvement in sensor design along with the advances in micro- and nano-fabrication technology and the use of newly designed materials, leading to the development of high-performance gas sensors. Advanced micro- and nano-fabrication technology enables miniaturization of these sensors into micro-sized gas sensor arrays while maintaining the sensing performance. These capabilities facilitate the development of miniaturized integrated gas sensor arrays that enhance both sensor sensitivity and selectivity towards various analytes. In the past, several micro- and nano-gas sensors have been proposed and investigated where each type of sensor exhibits various advantages and limitations in sensing resolution, operating power, response, and recovery time. This paper presents an overview of the recent progress made in a wide range of gas-sensing technology. The sensing functionalizing materials, the advanced micro-machining fabrication methods, as well as their constraints on the sensor design, are discussed. The sensors’ working mechanisms and their structures and configurations are reviewed. Finally, the future development outlook and the potential applications made feasible by each category of the sensors are discussed.

Advanced Micro- and Nano-Gas Sensor Technology: A Review

Capacitive micromachined ultrasonic transducers (CMUTs) have been subject to extensive research for the last two decades. Although they were initially developed for air-coupled applications, today their main application space is medical imaging and therapy. This paper first presents a brief description of CMUTs, their basic structure and operating principles. Our progression of developing several generations of fabrication processes is discussed with an emphasis on the advantages and disadvantages of each process. Monolithic and hybrid approaches for integrating CMUTs with supporting integrated circuits are surveyed. Several prototype transducer arrays with integrated front-end electronic circuits we developed and their use for 2D and 3D, anatomical and functional imaging, and ablative therapies are described. The presented results prove the CMUT as a micro-electro-mechanical systems technology for many medical diagnostic and therapeutic applications.

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Capacitive micromachined ultrasonic transducers for medical imaging and therapy

Capacitive micromachined ultrasonic transducer (MUT) technology is a prime candidate for next generation imaging systems. Medical and underwater imaging and the nondestructive evaluation (NDE) societies have expressed growing interest in cMUTs over the years. Capacitive micromachined ultrasonic transducer technology is expected to make a strong impact on imaging technologies, especially volumetric imaging, and to appear in commercial products in the near future. This paper focuses on fabrication technologies for cMUTs and reviews and compares variations in the production processes. We have developed two main approaches to the fabrication of cMUTs: the sacrificial release process and the recently introduced wafer-bonding method. This paper gives a thorough review of the sacrificial release processes, and it describes the new wafer-bonding method in detail. Process variations are compared qualitatively and quantitatively whenever possible. Through these comparisons, it was concluded that wafer-bonded cMUT technology was superior in terms of process control, yield, and uniformity. Because the number of steps and consequent process time were reduced (from six-mask process to four-mask process), turn-around time was improved significantly.

Capacitive micromachined ultrasonic transducers: fabrication technology

For three-dimensional (3D) ultrasound imaging, connecting elements of a two-dimensional (2D) transducer array to the imaging system's front-end electronics is a challenge because of the large number of array elements and the small element size. To compactly connect the transducer array with electronics, we flip-chip bond a 2D 16 times 16-element capacitive micromachined ultrasonic transducer (CMUT) array to a custom-designed integrated circuit (IC). Through-wafer interconnects are used to connect the CMUT elements on the top side of the array with flip-chip bond pads on the back side. The IC provides a 25-V pulser and a transimpedance preamplifier to each element of the array. For each of three characterized devices, the element yield is excellent (99 to 100% of the elements are functional). Center frequencies range from 2.6 MHz to 5.1 MHz. For pulse-echo operation, the average -6-dB fractional bandwidth is as high as 125%. Transmit pressures normalized to the face of the transducer are as high as 339 kPa and input-referred receiver noise is typically 1.2 to 2.1 rnPa/ radicHz. The flip-chip bonded devices were used to acquire 3D synthetic aperture images of a wire-target phantom. Combining the transducer array and IC, as shown in this paper, allows for better utilization of large arrays, improves receive sensitivity, and may lead to new imaging techniques that depend on transducer arrays that are closely coupled to IC electronics.

Integration of 2D CMUT arrays with front-end electronics for volumetric ultrasound imaging

Introduces a new method for fabricating capacitive micromachined ultrasonic transducers (CMUTs) that uses a wafer bonding technique. The transducer membrane and cavity are defined on an SOI (silicon-on-insulator) wafer and on a prime wafer, respectively. Then, using silicon direct bonding in a vacuum environment, the two wafers are bonded together to form a transducer. This new technique, capable of fabricating large CMUTs, offers advantages over the traditionally micromachined CMUTs. First, forming a vacuum-sealed cavity is relatively easy since the wafer bonding is performed in a vacuum chamber. Second, this process enables better control over the gap height, making it possible to fabricate very small gaps (less than 0.1 /spl mu/m). Third, since the membrane is made of single crystal silicon, it is possible to predict and control the mechanical properties of the membrane to within 5%. Finally, the number of process steps involved in making a CMUT has been reduced from 22 to 15, shortening the device turn-around time. All of these advantages provide repeatable fabrication of CMUTs featuring predictable center frequency, bandwidth, and collapse voltage.

Fabricating capacitive micromachined ultrasonic transducers with wafer-bonding technology

There is described a micromachined ultrasonic transducers (MUTS) and a method of fabrication. The membranes of the transducers are fusion bonded to cavities to form cells. The membranes are formed on a wafer (11) of sacrificial material. This permits handling for fusions bonding. The sacrificial material is then removed to leave the membrane (14). Membranes of silicon, silicon nitride, etc. can be formed on the sacrificial material. Also described are cMUTs, pMUTs and mMUTs.

Micromachined ultrasonic transducers and method of fabrication

The embodiments of the present invention provide a CMUT array and method of fabricating the same. The CMUT array has CMUT elements individually or respectively addressable from a backside of a substrate on which the CMUT array is fabricated. In one embodiment, a CMUT array is formed on a front side of a very high conductivity silicon substrate. Through wafer trenches are etched into the substrate from the backside of the substrate to electrically isolate individual CMUT elements formed on the front side of the substrate. Electrodes are formed on the backside of the substrate to individually address the CMUT elements through the substrate.

Capacitive micromachined ultrasonic transducer array with through-substrate electrical connection and method of fabricating same

Structure for capacitive micromachined ultrasonic transducer (CMUT) device or other vibrating membrane device having non-uniform membrane so that membrane mass and stiffness characteristics may be substantially independently adjusted CMUT having trenched membrane and/or membrane with non-uniform thickness or density Method for operating transducer or vibrating membrane device Array of devices at least some of which have non-uniform membrane properties CMUT comprising substrate, support for membrane, and membrane extending over support to create cavity, membrane having non-uniform membrane thickness resulting from at least one of: thickening on upper surface of the membrane outside of cavity, thickening on lower surface of membrane inside cavity, trench on upper surface of membrane, trench on lower surface of the membrane, and any combination of two or more of these Method for fabricating CMUT or vibrating membrane device having non-uniform membrane High mechanical sensitivity transducer for sensor, microphone, and/or transmitter

Yongli Huang

Papers

Fabricating capacitive micromachined ultrasonic transducers with wafer-bonding technology

Capacitive micromachined ultrasonic transducers: fabrication technology

Micromachined ultrasonic transducers and method of fabrication

Capacitive micromachined ultrasonic transducer array with through-substrate electrical connection and method of fabricating same

Capacitive micromachined ultrasonic transducer (CMUT) with varying thickness membrane