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Young Rae Kim
Researcher at Sungkyunkwan University
Publications - 22
Citations - 629
Young Rae Kim is an academic researcher from Sungkyunkwan University. The author has contributed to research in topics: Graphene & Schottky barrier. The author has an hindex of 10, co-authored 22 publications receiving 394 citations. Previous affiliations of Young Rae Kim include Electronics and Telecommunications Research Institute.
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Journal ArticleDOI
Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
Quoc An Vu,Yong Seon Shin,Young Rae Kim,Van Luan Nguyen,Won Tae Kang,Hyun Kim,Dinh Hoa Luong,Il Min Lee,Kiyoung Lee,Dong-Su Ko,Jinseong Heo,Seongjun Park,Young Hee Lee,Woo Jong Yu +13 more
TL;DR: A two-terminal floating gate memory, tunnelling random access memory fabricated by a monolayer MoS2/h-BN/monolayer graphene vertical stack, demonstrates an ultimately low off-state current of 10−14 A, leading to ultrahigh on/off ratio over 109, about ∼103 times higher than other two-Terminal memories.
Journal ArticleDOI
Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures
Yong Seon Shin,Kiyoung Lee,Young Rae Kim,Hyangsook Lee,I. Min Lee,Won Tae Kang,Boo Heung Lee,Kunnyun Kim,Jinseong Heo,Seongjun Park,Young Hee Lee,Woo Jong Yu +11 more
TL;DR: The vertical mobility in VFET can be improved by suppressing the trap states by raising the Fermi level of WSe2 and increasing the injected carrier density by applying a high drain voltage, and the mobility in Mn vdWH at +50 V gate voltage is about 76 times higher than the initial mobility of Au vd WH.
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Ultrahigh Gauge Factor in Graphene/MoS2 Heterojunction Field Effect Transistor with Variable Schottky Barrier.
Ilmin Lee,Won Tae Kang,Yong Seon Shin,Young Rae Kim,Ui Yeon Won,Kunnyun Kim,Dinh Loc Duong,Kiyoung Lee,Jinseong Heo,Young Hee Lee,Woo Jong Yu +10 more
TL;DR: A highly sensitive strain sensor using a variable Schottky barrier in a MoS2/graphene heterostructure field effect transistor (FET) is demonstrated and the ultrahigh sensitivity of graphene/MoS2 heterost structure FETs can be developed for next-generation electronic and mechanical-electronic devices.
Journal ArticleDOI
Unveiling the Hot Carrier Distribution in Vertical Graphene/h-BN/Au van der Waals Heterostructures for High-Performance Photodetector.
Young Rae Kim,Thanh Luan Phan,Yong Seon Shin,Won Tae Kang,Ui Yeon Won,Ilmin Lee,Ji Eun Kim,Kunnyun Kim,Young Hee Lee,Woo Jong Yu +9 more
TL;DR: This study demonstrates a wide-range vertical photodetector comprising a graphene/h-BN/Au heterostructure in which a h-BN insulating layer is inserted between an Au electrode and graphene photo absorber to generate photocurrents that can overcome the Schottky barrier.
Journal ArticleDOI
Photoinduced Tuning of Schottky Barrier Height in Graphene/MoS2 Heterojunction for Ultrahigh Performance Short Channel Phototransistor
TL;DR: An effective method to develop phototransistors based on 2D materials is confirmed and the ultrahigh performance of the photOTransistor is obtained, which is promising for high-performance optoelectronic applications.