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Yuchen Liu
Researcher at Xidian University
Publications - 7
Citations - 21
Yuchen Liu is an academic researcher from Xidian University. The author has contributed to research in topics: Engineering & High-electron-mobility transistor. The author has an hindex of 1, co-authored 1 publications receiving 4 citations.
Papers
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Journal ArticleDOI
Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire
Haodong Hu,Yuchen Liu,Genquan Han,Cizhe Fang,Yanfang Zhang,Huan Liu,Yibo Wang,Yan Liu,Jiandong Ye,Yue Hao +9 more
TL;DR: This work may pave a way for the fabrication of poly-Ga2O3 ultraviolet photodetector and find a method to improve responsivity and speed of response.
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Simulation Study of Lateral Schottky Barrier IMPATT Diode Based on AlGaN/GaN 2-DEG for Terahertz Applications
TL;DR: In this article , a novel lateral Schottky barrier high-low impactionization-avalanche-transit-time (IMPATT) diode is proposed based on the AlGaN/GaN 2-D electron gas (2-DEG).
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Investigation on Effect of Doped InP Subchannel Thickness and Delta-Doped InP Layer of Composite Channel HEMT
TL;DR: In this article , the performance of In0.53Ga0.47As/InP composite channel InP-based high-electron-mobility transistor (HEMT) is investigated by using numerical simulation.
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Terahertz monolithic integrated narrow-band filter based on the silicon carbide substrate
TL;DR: In this paper , a narrow-band terahertz integrated cavity filter based on the silicon carbide (SiC) substrate is presented, where two metalized via-holes in a rectangular integrated cavity are introduced to operate as a coupling structure, controlling the direct coupling between input and output feeding lines, further controlling the frequency of the transmission zero.
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Characteristics Comparison of Nanochannel GaN-on-Si and GaN-on-SiC HEMTs
TL;DR: In this paper , a comparative study on device characteristics of GaN-on-Si and GaN on-SiC high electron mobility transistors (HEMTs) fabricated with the gate lengths of 175, 150 and 125 nm was conducted.