It is often assumed that it is not possible to alter the properties of magnetic materials once they have been prepared and put into use. For example, although magnetic materials are used in information technology to store trillions of bits (in the form of magnetization directions established by applying external magnetic fields), the properties of the magnetic medium itself remain unchanged on magnetization reversal. The ability to externally control the properties of magnetic materials would be highly desirable from fundamental and technological viewpoints, particularly in view of recent developments in magnetoelectronics and spintronics. In semiconductors, the conductivity can be varied by applying an electric field, but the electrical manipulation of magnetism has proved elusive. Here we demonstrate electric-field control of ferromagnetism in a thin-film semiconducting alloy, using an insulating-gate field-effect transistor structure. By applying electric fields, we are able to vary isothermally and reversibly the transition temperature of hole-induced ferromagnetism.

Electric-field control of ferromagnetism

Recent advances in the theory and experimental realization of ferromagnetic semiconductors give hope that a new generation of microelectronic devices based on the spin degree of freedom of the electron can be developed. This review focuses primarily on promising candidate materials (such as GaN, GaP and ZnO) in which there is already a technology base and a fairly good understanding of the basic electrical and optical properties. The introduction of Mn into these and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. There are a number of other potential dopant ions that could be employed (such as Fe, Ni, Co, Cr) as suggested by theory [see, for example, Sato and Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 39, L555 (2000)]. Growth of these ferromagnetic materials by thin film techniques, such as molecular beam epitaxy or pulsed laser deposition, provides excellent control of the dopant concentration and the ability to grow single-phase layers. T...

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Wide band gap ferromagnetic semiconductors and oxides

The controllable synthesis of nanostructured CeO2-based materials is an imperative issue for environment- and energy-related applications. In this review, we present the recent technological and theoretical advances related to the CeO2-based nanomaterials, with a focus on the synthesis from one dimensional to mesoporous ceria as well as the properties from defect chemistry to nano-size effects. Seven extensively studied aspects regarding the applications of nanostructured ceria-based materials are selectively surveyed as well. New experimental approaches have been demonstrated with an atomic scale resolution characterization. Density functional theory (DFT) calculations can provide insight into the rational design of highly reactive catalysts and understanding of the interactions between the noble metal and ceria support. Achieving desired morphologies with designed crystal facets and oxygen vacancy clusters in ceria via controlled synthesis process is quite important for highly active catalysts. Finally, remarks on the challenges and perspectives on this exciting field are proposed.

Nanostructured ceria-based materials: synthesis, properties, and applications

GenX is a versatile program using the differential evolution algorithm for fitting X-ray and neutron reflectivity data. It utilizes the Parratt recursion formula for simulating specular reflectivity. The program is easily extensible, allowing users to incorporate their own models into the program. This can be useful for fitting data from other scattering experiments, or for any other minimization problem which has a large number of input parameters and/or contains many local minima, where the differential evolution algorithm is suitable. In addition, GenX manages to fit an arbitrary number of data sets simultaneously. The program is released under the GNU General Public License.

GenX: an extensible X-ray reflectivity refinement program utilizing differential evolution

Constructing heterojunctions between two semiconductors with matched band structure is an effective strategy to acquire high-efficiency photocatalysts. The S-scheme heterojunction system has shown great potential in facilitating separation and transfer of photogenerated carriers, as well as acquiring strong photoredox ability. Herein, a 0D/2D S-Scheme heterojunction material involving CeO2 quantum dots and polymeric carbon nitride (CeO2 /PCN) is designed and constructed by in situ wet chemistry with subsequent heat treatment. This S-scheme heterojunction material shows high-efficiency photocatalytic sterilization rate (88.1 %) towards Staphylococcus aureus (S. aureus) under visible-light irradiation (λ≥420 nm), which is 2.7 and 8.2 times that of pure CeO2 (32.2 %) and PCN (10.7 %), respectively. Strong evidence of S-scheme charge transfer path is verified by theoretical calculations, in situ irradiated X-ray photoelectron spectroscopy, and electron paramagnetic resonance.

Designing a 0D/2D S-Scheme Heterojunction over Polymeric Carbon Nitride for Visible-Light Photocatalytic Inactivation of Bacteria.

Traditional nanostructured design of cerium oxide catalysts typically focuses on their shape, size, and elemental composition We report a different approach to enhance the catalytic activity of cerium oxide nanostructures through engineering high density of oxygen vacancy defects in these catalysts without dopants The defect engineering was accomplished by a low pressure thermal activation process that exploits the nanosize effect of decreased oxygen storage capacity in nanostructured cerium oxides

http://ncesr.unl.edu/wordpress/wp-content/uploads/2011/01/11-07-11-511-Zeng-Defect-Engineering-in-Cubic-Cerium-article.pdf

Defect Engineering in Cubic Cerium Oxide Nanostructures for Catalytic Oxidation

Renewable energy-driven electrochemical N2 reduction reaction (NRR) provides a green and sustainable route for NH3 synthesis under ambient conditions but is plagued by a high reaction barrier and low selectivity. To promote NRR, modification of the catalyst surface to increase N2 adsorption and activation is key. Here, we show that engineering surface oxygen vacancies of TiO2 permits significantly enhanced NRR activity with an NH3 yield rate of about 3.0 μgNH3 h−1 mgcat.−1 and a faradaic efficiency (FE) of 6.5% at -0.12 V (vs. the reversible hydrogen electrode, RHE). Efficient conversion of N2 to NH3 is achieved in a wide applied potential range from -0.07 to -0.22 V (vs. RHE) with NH3 production rates ≥ 2.0 μgNH3 h−1 mgcat.-1 and NH3 FEs ≥ 4.9%, respectively. An NH3 FE as high as 9.8% is obtained at a low overpotential of 80 mV. Density functional theory calculations reveal that the surface oxygen vacancies in TiO2 play a vital role in facilitating electrochemical N2 reduction by activating the first protonation step and also increasing N2 chemisorption (relative to *H).

Activated TiO2 with tuned vacancy for efficient electrochemical nitrogen reduction

Activation of Ni Particles into Single Ni–N Atoms for Efficient Electrochemical Reduction of CO2

X-ray-absorption fine-structure measurements were carried out to probe the local environment surrounding Mn ions in Mn-doped nanocrystals of ZnS with different size distributions ranging from 30--35 \AA{} to 50--55 \AA{}. The interatomic distances between Mn and neighboring atoms, the coordination number, local disorder, and effective valency determined for the nanocrystals are compared with those in bulk Mn-doped ZnS. The Mn ions are found to substitute for the Zn sites in the host ZnS but with significant size-dependent local structural changes. The questions of Mn-cluster formation and the presence of Mn impurities on the surface of the nanocrystals are addressed. Near-edge x-ray-absorption fine structures indicate that the effective valency of Mn ions in the nanocrystals is close to +2 with a weak size dependence. These local structures are believed to be closely related to the novel optical properties observed in this new class of semiconductors.

Local structures around Mn luminescent centers in Mn-doped nanocrystals of ZnS

The development of highly selective, low cost, and energy-efficient electrocatalysts is crucial for CO2 electrocatalysis to mitigate energy shortages and to lower the global carbon footprint. Herein, we first report that carbon-coated Ni nanoparticles supported on N-doped carbon enable efficient electroreduction of CO2 to CO. In contrast to most previously reported Ni metal catalysts that resulted in severe hydrogen evolution during CO2 conversion, the Ni particle catalyst here presents an unprecedented CO faradaic efficiency of approximately 94% at an overpotential of 0.59 V, even comparable to that of the best single Ni sites. The catalyst also affords a high CO partial current density and a large CO turnover frequency, reaching 22.7 mA cm-2 and 697 h-1 at -1.1 V (versus the reversible hydrogen electrode), respectively. Experiments combined with density functional theory calculations showed that the carbon layer coated on Ni and N-dopants in carbon material both play important roles in improving catalytic activity for electrochemical CO2 reduction to CO by stabilizing *COOH without affecting the easy *CO desorption ability of the catalyst.

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Yun-Liang Soo

Papers

Defect Engineering in Cubic Cerium Oxide Nanostructures for Catalytic Oxidation

Activated TiO2 with tuned vacancy for efficient electrochemical nitrogen reduction

Activation of Ni Particles into Single Ni–N Atoms for Efficient Electrochemical Reduction of CO2

Local structures around Mn luminescent centers in Mn-doped nanocrystals of ZnS

Carbon-supported Ni nanoparticles for efficient CO2 electroreduction