Yuting Yeo

TL;DR: It is reported that few-layer pristine black phosphorus channels passivated in an inert gas environment, without any prior exposure to air, exhibit greatly improved n-type charge transport resulting in symmetric electron and hole transconductance characteristics.

TL;DR: It is shown that intrinsic defects in tungsten disulphide play an important role in this proximity effect and that graphene can act as a probe to detect defects in semiconducting surfaces.

TL;DR: In this article, a few-layer black phosphorus field effect transistors were characterized on hexagonal boron nitride, an atomically smooth and charge trap-free substrate.

TL;DR: The observation of conductance oscillations due to ballistic snake states along a p-n interface in high-quality graphene encapsulated by hexagonal boron nitride are reported, which are exceptionally robust as they can propagate over 12 μm, limited only by the size of the authors' sample, and survive up to at least 120 K.

TL;DR: Strong n-type conduction upon insertion of the h-BN at the Co/BP interface is observed, in sharp contrast to directly Co contacted p-type BP devices, and this allows us to probe high electron mobilities and observe insulator-metal transitions even under two-terminal measurement geometry.