Z
Zahia Bougrioua
Researcher at Centre national de la recherche scientifique
Publications - 91
Citations - 1694
Zahia Bougrioua is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Electron mobility & Gallium nitride. The author has an hindex of 23, co-authored 89 publications receiving 1571 citations. Previous affiliations of Zahia Bougrioua include Ghent University & Lille University of Science and Technology.
Papers
More filters
Journal ArticleDOI
Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)
H. Marchand,Patrick Desjardins,S. Guillon,J.-E. Paultre,Zahia Bougrioua,R. Y.-F. Yip,Remo A. Masut +6 more
TL;DR: In this paper, the metalorganic vapor phase epitaxy of coherent self-assembled InAs islands on InP(001) is demonstrated using transmission electron microscopy and photoluminescence (PL) spectroscopy at 77 K.
Journal ArticleDOI
Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization
TL;DR: In this article, low temperature spatially resolved cathodoluminescence was carried out on GaN films grown by the epitaxial-lateral-overgrowth (ELO) technique with the nonpolar (11-20) and the semipolar (11 -22) orientations on R- and M-sapphires, respectively.
Journal ArticleDOI
Microstructural Characterization of Semipolar GaN Templates and Epitaxial-Lateral-Overgrown Films Deposited on $M$-Plane Sapphire by Metalorganic Vapor Phase Epitaxy
TL;DR: The microstructure of GaN templates and epitaxial lateral overgrown (ELO) films deposited on M-plane sapphire was investigated by transmission electron microscopy as mentioned in this paper.
Patent
Method of producing self supporting substrates comprising iii-nitrides by means of heteroepitaxy on a sacrificial layer
TL;DR: In this article, a method for the production of self-supporting substrates comprising element III nitrides is described, which is characterised by depositing a single-crystal silicon-based intermediary layer by way of a sacrificial layer intended to be spontaneously vaporised during the III-nitride epitaxy step.
Journal ArticleDOI
Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN–GaN HEMT‐like structures
Zahia Bougrioua,Zahia Bougrioua,Ingrid Moerman,Leona C. Nistor,B. Van Daele,Eva Monroy,T. Palacios,Fernando Calle,Mathieu Leroux +8 more
TL;DR: The semi-insulating character of GaN epitaxial layers can be achieved by the control of the early stages of growth on the substrate as mentioned in this paper, where two low temperature (LT) AlN interlayers are added to reduce threading dislocation densities by up to one order of magnitude.