Zeineb Loghmari

TL;DR: The first quantum cascade lasers (QCLs) directly grown on a silicon substrate exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate, and open the way to the development of a wide variety of integrated sensors.

TL;DR: An off-beam quartz-enhanced photoacoustic spectroscopy sensor was designed for ethylene detection using a distributed-feedback quantum cascade laser operating in the mid-infrared around 11 μm and exhibited a limit of detection of 60 ppb for 60 s integration.

TL;DR: In this article, the InAs/AlSb quantum cascade laser (QCL) is monolithically integrated on an on-axis (001) Si substrate, achieving a threshold current density of 0.92 −0.95 kA/cm2 at 300 K for 3.6mm-long devices and operate in pulsed mode up to 410 K.

TL;DR: In this article, a distributed feedback (DFB) quantum cascade laser with InAs and AlSb was used to demonstrate a continuous wave (CW) and a single mode emission at a wavelength of 17.7 µm with output powers in the mW range.

TL;DR: In this article , a review of the epitaxial integration of antimonide laser overgrowth on Si is presented, where the authors show that while diode lasers are sensitive to residual crystal defects, the quantum cascade and interband cascade lasers exhibit performances comparable to those of similar devices grown on their native substrates, due to their particular band structures and radiative recombination channels.